Influence of different buffers on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

Magnetic Tunnel Junctions (MTJs) with Perpendicular Magnetic Anisotropy (PMA) have recently brought a significant attention in view of application as high-density non-volatile Magnetic Random Access Memory (MRAM) due to their possible low critical current density, good thermal stability and downscal...

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Bibliographic Details
Main Authors: Frankowski, M., Zywczak, A., Czapkiewicz, M., Zietek, S., Kanak, J., Banasik, M., Powroznik, W., Skowronski, W., Checinski, J., Wrona, J., Stobiecki, T.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Critical current density (superconductivity)
Magnetic domains
Magnetic tunneling
Perpendicular magnetic anisotropy
Thermal stability
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Summary:Magnetic Tunnel Junctions (MTJs) with Perpendicular Magnetic Anisotropy (PMA) have recently brought a significant attention in view of application as high-density non-volatile Magnetic Random Access Memory (MRAM) due to their possible low critical current density, good thermal stability and downscalable junction size [1]. As the PMA can be affected by the MTJ layer structure, these properties can also be modified significantly, creating an opportunity for further improvement of the magnetic memory technology based on MTJs.
ISSN:2150-4598
2150-4601
DOI:10.1109/INTMAG.2015.7157507