Effects of time-variant non-linear TSV parameters on transient analysis for signal integrity

This paper looksat the impact of considering the exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and...

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Bibliographic Details
Main Authors: Piersanti, S., de Paulis, F., Orlandi, A., Achkir, B., Fan, J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Crosstalk
Equivalent circuits
Integrated circuit modeling
Silicon
Substrates
Through-silicon vias
Online Access:Request full text
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Description
Summary:This paper looksat the impact of considering the exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and crosstalk are also studied.
ISSN:2162-7673
2640-7469
DOI:10.1109/APEMC.2015.7175241