Effects of time-variant non-linear TSV parameters on transient analysis for signal integrity

This paper looksat the impact of considering the exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and...

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Main Authors: Piersanti, S., de Paulis, F., Orlandi, A., Achkir, B., Fan, J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Crosstalk
Equivalent circuits
Integrated circuit modeling
Silicon
Substrates
Through-silicon vias
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creator Piersanti, S.
de Paulis, F.
Orlandi, A.
Achkir, B.
Fan, J.
description This paper looksat the impact of considering the exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and crosstalk are also studied.
doi_str_mv 10.1109/APEMC.2015.7175241
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source IEEE Xplore All Conference Series
subjects Capacitance
Crosstalk
Equivalent circuits
Integrated circuit modeling
Silicon
Substrates
Through-silicon vias
title Effects of time-variant non-linear TSV parameters on transient analysis for signal integrity
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