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Modeling the PiezoElectronic Transistor - a nanoscale, strain-based transduction device for fast low power switching

We have invented a post-CMOS transduction device based on a piezoelectrically driven metal insulator transition termed the PiezoElectronic Transistor (PET) [1]. An input voltage pulse activates a piezoelectric element (PE) [2] which transduces input voltage into an electro-acoustic pulse that in tur...

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Bibliographic Details
Main Authors: Martyna, Glenn J., Elmegreen, Bruce, Newns, Dennis M.
Format: Conference Proceeding
Language:English
Subjects:
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Summary:We have invented a post-CMOS transduction device based on a piezoelectrically driven metal insulator transition termed the PiezoElectronic Transistor (PET) [1]. An input voltage pulse activates a piezoelectric element (PE) [2] which transduces input voltage into an electro-acoustic pulse that in turn drives an insulator to metal transition (IMT) in a piezoresistive element (PR) [3,4]; the transition efficiently transduces the electro-acoustic pulse to voltage. Using the known properties of bulk materials, we show using modeling that the PET achieves multi-GHz clock speeds with voltages as low as 0.1 V and a large On/Off switching ratio (≈10 4 ) for digital logic [1]. The PET switch is compatible with CMOS-style logic. At larger scale the PET is predicted to function effectively as a large-area low voltage device for use in sensor applications and at larger yet as a RF-switch with an excellent figure of merit. Three demonstration devices have been fabricated to show proof of concept [5].
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2015.7175646