Self-organized low density SiGe quantum dot molecules

Strain feld distribution at the surface of SiGe nanomounds formed by heteroepitaxy is exploited to obtain a positional ordering of the closely spaced Ge quantum dots (quantum dot molecules). We demonstrated, that a low density of the lateral quantum dot molecules (up to 10 7 cm -2 ) can be achieved...

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Bibliographic Details
Main Authors: Kuchinskaya, Polina A., Zinovyev, Vladimir A., Rudin, Sergey A., Katsyuba, Aleksey V., Dvurechenskii, Anatoly V., Mudryi, Aleksandr V.
Format: Conference Proceeding
Language:English
Subjects:
Arrays
germanium
heteroepitaxy
quantum dot molecules
Quantum dots
self-organization
Silicon
Silicon germanium
Surface morphology
Surface treatment
Three-dimensional displays
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Summary:Strain feld distribution at the surface of SiGe nanomounds formed by heteroepitaxy is exploited to obtain a positional ordering of the closely spaced Ge quantum dots (quantum dot molecules). We demonstrated, that a low density of the lateral quantum dot molecules (up to 10 7 cm -2 ) can be achieved by tuning of the growth conditions. We present a growth model that provide physical insights into possible mechanisms underlying the formation of lateral SiGe quantum dot molecules. The electronic band structure of the molecules was calculated by 6-band kp method. The results of theoretical study are in a good agreement with experimental measurements of photoluminescence spectra from the samples with quantum dot molecules.
ISSN:1815-3712
DOI:10.1109/EDM.2015.7184483