Noise and gain measurements of high-power 1.3-/spl mu/m InGaAsP/InP tapered amplifiers

We report gain and noise measurements on an improved InGaAsP/InP tapered semiconductor amplifier. These results represent the highest gain and output power achieved from one of these amplifiers. The amplifier structure has a single-mode ridge waveguide at the input, followed by a tapered gain region...

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Bibliographic Details
Main Authors: Betts, G.E., Donnelly, J.P., Walpole, J.N., Groves, S.H., O'Donnell, F.J., Missaggia, L.J., Bailey, R.J., Napoleone, A.
Format: Conference Proceeding
Language:English
Subjects:
Diffraction
Gain measurement
High power amplifiers
Indium phosphide
Noise measurement
Polarization
Power amplifiers
Power generation
Semiconductor device noise
Semiconductor optical amplifiers
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Summary:We report gain and noise measurements on an improved InGaAsP/InP tapered semiconductor amplifier. These results represent the highest gain and output power achieved from one of these amplifiers. The amplifier structure has a single-mode ridge waveguide at the input, followed by a tapered gain region wherein the beam expands by diffraction with no transverse index guiding. Both facets are antireflection-coated to roughly 1% reflectivity. The actual feedback from the front facet is
DOI:10.1109/OFC.1997.719876