Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms

We review previous research on ion implantation in Al/sub x/Ga/sub 1-x/As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 1998-07, Vol.4 (4), p.606-618
Main Authors: Lagow, B.W., Turkot, B.A., Robertson, I.M., Coleman, J.J., Roh, S.D., Forbes, D.V., Rehn, L.E., Baldo, P.M.
Format: Article
Language:English
Subjects:
Ion implantation
Laboratories
Lattices
Nuclear electronics
Optoelectronic devices
Production
Radiation effects
Semiconductor materials
Silicon devices
Solids
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Summary:We review previous research on ion implantation in Al/sub x/Ga/sub 1-x/As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.
ISSN:1077-260X
1558-4542
DOI:10.1109/2944.720470