Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms

We review previous research on ion implantation in Al/sub x/Ga/sub 1-x/As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 1998-07, Vol.4 (4), p.606-618
Main Authors: Lagow, B.W., Turkot, B.A., Robertson, I.M., Coleman, J.J., Roh, S.D., Forbes, D.V., Rehn, L.E., Baldo, P.M.
Format: Article
Language:English
Subjects:
Ion implantation
Laboratories
Lattices
Nuclear electronics
Optoelectronic devices
Production
Radiation effects
Semiconductor materials
Silicon devices
Solids
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c970-f16c856f4742ca18330583d35bdbdfdc011bfccd77408cddcb6863fd8a035d803
cites cdi_FETCH-LOGICAL-c970-f16c856f4742ca18330583d35bdbdfdc011bfccd77408cddcb6863fd8a035d803
container_end_page 618
container_issue 4
container_start_page 606
container_title IEEE journal of selected topics in quantum electronics
container_volume 4
creator Lagow, B.W.
Turkot, B.A.
Robertson, I.M.
Coleman, J.J.
Roh, S.D.
Forbes, D.V.
Rehn, L.E.
Baldo, P.M.
description We review previous research on ion implantation in Al/sub x/Ga/sub 1-x/As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.
doi_str_mv 10.1109/2944.720470
format article
fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_ieee_primary_720470</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>720470</ieee_id><sourcerecordid>10_1109_2944_720470</sourcerecordid><originalsourceid>FETCH-LOGICAL-c970-f16c856f4742ca18330583d35bdbdfdc011bfccd77408cddcb6863fd8a035d803</originalsourceid><addsrcrecordid>eNo9kD1PwzAQhi0EEqUwsTF5R2nOsR07bFEFpVIllg6IJXL8QYPyJTuRCr-ehlRM957e5254ELonsCIEsjjJGFuJBJiAC7QgnMuIcZZcnjIIESUpvF-jmxC-AEAyCQv0se1aXDV9rdpBDdW0tDiv4zCW-Bhv1F8g0THOwxM2qlGfFofBj3oYvQ1YtQarpvP9ofqZzxurD6qtQhNu0ZVTdbB357lE-5fn_fo12r1ttut8F-lMQORIqiVPHRMs0YpISoFLaigvTWmc0UBI6bQ2QjCQ2hhdpjKlzkgFlBsJdIke57fadyF464reV43y3wWBYrJSTFaK2cqJfpjpylr7T57LX_M_XV0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Lagow, B.W. ; Turkot, B.A. ; Robertson, I.M. ; Coleman, J.J. ; Roh, S.D. ; Forbes, D.V. ; Rehn, L.E. ; Baldo, P.M.</creator><creatorcontrib>Lagow, B.W. ; Turkot, B.A. ; Robertson, I.M. ; Coleman, J.J. ; Roh, S.D. ; Forbes, D.V. ; Rehn, L.E. ; Baldo, P.M.</creatorcontrib><description>We review previous research on ion implantation in Al/sub x/Ga/sub 1-x/As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/2944.720470</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>IEEE</publisher><subject>Ion implantation ; Laboratories ; Lattices ; Nuclear electronics ; Optoelectronic devices ; Production ; Radiation effects ; Semiconductor materials ; Silicon devices ; Solids</subject><ispartof>IEEE journal of selected topics in quantum electronics, 1998-07, Vol.4 (4), p.606-618</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c970-f16c856f4742ca18330583d35bdbdfdc011bfccd77408cddcb6863fd8a035d803</citedby><cites>FETCH-LOGICAL-c970-f16c856f4742ca18330583d35bdbdfdc011bfccd77408cddcb6863fd8a035d803</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/720470$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Lagow, B.W.</creatorcontrib><creatorcontrib>Turkot, B.A.</creatorcontrib><creatorcontrib>Robertson, I.M.</creatorcontrib><creatorcontrib>Coleman, J.J.</creatorcontrib><creatorcontrib>Roh, S.D.</creatorcontrib><creatorcontrib>Forbes, D.V.</creatorcontrib><creatorcontrib>Rehn, L.E.</creatorcontrib><creatorcontrib>Baldo, P.M.</creatorcontrib><title>Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>We review previous research on ion implantation in Al/sub x/Ga/sub 1-x/As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.</description><subject>Ion implantation</subject><subject>Laboratories</subject><subject>Lattices</subject><subject>Nuclear electronics</subject><subject>Optoelectronic devices</subject><subject>Production</subject><subject>Radiation effects</subject><subject>Semiconductor materials</subject><subject>Silicon devices</subject><subject>Solids</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNo9kD1PwzAQhi0EEqUwsTF5R2nOsR07bFEFpVIllg6IJXL8QYPyJTuRCr-ehlRM957e5254ELonsCIEsjjJGFuJBJiAC7QgnMuIcZZcnjIIESUpvF-jmxC-AEAyCQv0se1aXDV9rdpBDdW0tDiv4zCW-Bhv1F8g0THOwxM2qlGfFofBj3oYvQ1YtQarpvP9ofqZzxurD6qtQhNu0ZVTdbB357lE-5fn_fo12r1ttut8F-lMQORIqiVPHRMs0YpISoFLaigvTWmc0UBI6bQ2QjCQ2hhdpjKlzkgFlBsJdIke57fadyF464reV43y3wWBYrJSTFaK2cqJfpjpylr7T57LX_M_XV0</recordid><startdate>199807</startdate><enddate>199807</enddate><creator>Lagow, B.W.</creator><creator>Turkot, B.A.</creator><creator>Robertson, I.M.</creator><creator>Coleman, J.J.</creator><creator>Roh, S.D.</creator><creator>Forbes, D.V.</creator><creator>Rehn, L.E.</creator><creator>Baldo, P.M.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199807</creationdate><title>Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms</title><author>Lagow, B.W. ; Turkot, B.A. ; Robertson, I.M. ; Coleman, J.J. ; Roh, S.D. ; Forbes, D.V. ; Rehn, L.E. ; Baldo, P.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c970-f16c856f4742ca18330583d35bdbdfdc011bfccd77408cddcb6863fd8a035d803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Ion implantation</topic><topic>Laboratories</topic><topic>Lattices</topic><topic>Nuclear electronics</topic><topic>Optoelectronic devices</topic><topic>Production</topic><topic>Radiation effects</topic><topic>Semiconductor materials</topic><topic>Silicon devices</topic><topic>Solids</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lagow, B.W.</creatorcontrib><creatorcontrib>Turkot, B.A.</creatorcontrib><creatorcontrib>Robertson, I.M.</creatorcontrib><creatorcontrib>Coleman, J.J.</creatorcontrib><creatorcontrib>Roh, S.D.</creatorcontrib><creatorcontrib>Forbes, D.V.</creatorcontrib><creatorcontrib>Rehn, L.E.</creatorcontrib><creatorcontrib>Baldo, P.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE</collection><collection>CrossRef</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lagow, B.W.</au><au>Turkot, B.A.</au><au>Robertson, I.M.</au><au>Coleman, J.J.</au><au>Roh, S.D.</au><au>Forbes, D.V.</au><au>Rehn, L.E.</au><au>Baldo, P.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>1998-07</date><risdate>1998</risdate><volume>4</volume><issue>4</issue><spage>606</spage><epage>618</epage><pages>606-618</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>We review previous research on ion implantation in Al/sub x/Ga/sub 1-x/As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.</abstract><pub>IEEE</pub><doi>10.1109/2944.720470</doi><tpages>13</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1077-260X
ispartof IEEE journal of selected topics in quantum electronics, 1998-07, Vol.4 (4), p.606-618
issn 1077-260X
1558-4542
language eng
recordid cdi_ieee_primary_720470
source IEEE Electronic Library (IEL) Journals
subjects Ion implantation
Laboratories
Lattices
Nuclear electronics
Optoelectronic devices
Production
Radiation effects
Semiconductor materials
Silicon devices
Solids
title Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T15%3A58%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ion%20implantation%20in%20Al/sub%20x/Ga/sub%201-x/As:%20damage%20structures%20and%20amorphization%20mechanisms&rft.jtitle=IEEE%20journal%20of%20selected%20topics%20in%20quantum%20electronics&rft.au=Lagow,%20B.W.&rft.date=1998-07&rft.volume=4&rft.issue=4&rft.spage=606&rft.epage=618&rft.pages=606-618&rft.issn=1077-260X&rft.eissn=1558-4542&rft.coden=IJSQEN&rft_id=info:doi/10.1109/2944.720470&rft_dat=%3Ccrossref_ieee_%3E10_1109_2944_720470%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c970-f16c856f4742ca18330583d35bdbdfdc011bfccd77408cddcb6863fd8a035d803%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=720470&rfr_iscdi=true