Validation and Extension of Local Temperature Evaluation of Conductive Filaments in RRAM Devices

Local temperature plays a key role in resistive switching random access memory devices. We have previously presented a method for measuring the local filament temperature on a nanometric scale using an MIS bipolar transistor structure. Here, a more detailed analysis of the method is presented. A new...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-11, Vol.62 (11), p.3671-3677
Main Authors: Yalon, E., Gavrilov, A., Cohen, S., Ritter, D.
Format: Article
Language:English
Subjects:
Ambient temperature
Bipolar transistor
Boundary conditions
Calibration
Current measurement
Devices
Doping
Filaments
Memory devices
Nanostructure
Random access memory
resistive random access memory (RRAM)
Semiconductor device measurement
Switching
Temperature distribution
Temperature measurement
thermometry
Tunneling
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Summary:Local temperature plays a key role in resistive switching random access memory devices. We have previously presented a method for measuring the local filament temperature on a nanometric scale using an MIS bipolar transistor structure. Here, a more detailed analysis of the method is presented. A new calibration technique improves the accuracy of the extracted temperature. Alternative device structures allow validation of the method by the extraction of temperature that equals the ambient temperature when no self-heating occurs as well as extension of the obtained temperature range. The accuracy, prospects, and limitations of the method are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2476705