GaAs edge field emitter arrays fabrication by wet and dry etching

Wedge and wall structures were fabricated by wet and dry etching processes. Various emitter shapes were obtained and discussed in terms of emission and integration capabilities.

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Bibliographic Details
Main Authors: Kropfeld, P., Ducroquet, F., Yaradou, O., Vanoverschelde, A.
Format: Conference Proceeding
Language:English
Subjects:
Dry etching
Erbium
Fabrication
Field emitter arrays
Gallium arsenide
High power amplifiers
Optical control
Plasma measurements
Shape
Wet etching
Online Access:Request full text
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Description
Summary:Wedge and wall structures were fabricated by wet and dry etching processes. Various emitter shapes were obtained and discussed in terms of emission and integration capabilities.
DOI:10.1109/IVMC.1998.728653