Surface morphology and I-V characteristics of single crystal, polycrystalline and amorphous silicon FEAs

c-Si, poly-Si and a-Si field emitter arrays (FEAs) were successfully fabricated. The a-Si FEAs show improved electrical characteristics which come from smaller surface roughness and better defined gate apertures in comparison with poly-Si FEAs. It is expected that a-Si FEAs can give high reliability...

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Bibliographic Details
Main Authors: Jong Duk Lee, Byung Chang Shim, Chang Woo Oh, Il Hwan Kim, Hyung Soo Uh
Format: Conference Proceeding
Language:English
Subjects:
Amorphous silicon
Apertures
Crystallization
Doping
Electrodes
Oxidation
Rough surfaces
Surface morphology
Surface roughness
Surface treatment
Online Access:Request full text
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Summary:c-Si, poly-Si and a-Si field emitter arrays (FEAs) were successfully fabricated. The a-Si FEAs show improved electrical characteristics which come from smaller surface roughness and better defined gate apertures in comparison with poly-Si FEAs. It is expected that a-Si FEAs can give high reliability, uniformity and electrical stability in large area and high resolution display applications.
DOI:10.1109/IVMC.1998.728669