A 2D 4\!\times\! 4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications

We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4×4 pixel array ROIC is the proof of concept of the 10×10 pixel array readout ASIC for positron-emission tomography (PE...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2015-10, Vol.62 (5), p.2327-2333
Main Authors: Macias-Montero, Jose-Gabriel, Sarraj, Maher, Chmeissani, Mokhtar, Martinez, Ricardo, Puigdengoles, Carles
Format: Article
Language:English
Subjects:
Analog-digital conversion
Application specific integrated circuits
Cadmium compounds
Detectors
Energy resolution
gamma-ray detectors
II-VI semiconductor materials
low-power electronics
Noise
Photonics
positron emission tomography
semiconductor radiation detectors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4×4 pixel array ROIC is the proof of concept of the 10×10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0. 25 μm mixed-signal CMOS technology and occupies an area of 5. 3 mm×6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μW. In acquisition mode, the total power consumption of every pixel is 200 μW. An equivalent noise charge (ENC) of 160 e - RMS at maximum gain and negative polarity conditions has been measured at room temperature.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2015.2465377