Impact of backplane configuration on the statistical variability in 22nm FDSOI CMOS

In this paper, using variation aware device simulation, we study the local device variability and mismatch as affected by statistical variation resulting from differing backplane doping options in fully depleted SOI transistors. It is seen that discrete random doping effects associated with the choi...

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Bibliographic Details
Main Authors: Bazizi, E. M., Chakarov, I., Herrmann, T., Zaka, A., Jiang, L., Wu, X., Pandey, S. M., Benistant, F., Reid, D., Brown, A. R., Alexander, C., Millar, C., Asenov, A.
Format: Conference Proceeding
Language:English
Subjects:
Backplanes
CMOS
Conferences
Correlation
Devices
discrete doping
Doping
Drains
FDSOI
Logic gates
mismatch
Semiconductor process modeling
Semiconductors
Simulation
Threshold voltage
Transistors
variability
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Summary:In this paper, using variation aware device simulation, we study the local device variability and mismatch as affected by statistical variation resulting from differing backplane doping options in fully depleted SOI transistors. It is seen that discrete random doping effects associated with the choice of doping has a direct effect on mismatch, resulting in increased mismatch with larger channel doping. However, it is also seen that increased backplane doping may counter intuitively help to reduce the variability associated with discrete doping due modification of the electrostatic screening of the source/drain extensions.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2015.7292330