Speed analysis of wireless communication technology banked on HBT: An analytical approach to determine the impact of GaAs/GaAsBi diode model

• Main Authors: Afrin, Farhana, Titirsha, Twisha
• Format: Conference Proceeding
• Language: English
• Subjects: Bismuth; built-in potential; C D -V characteristics; Doping; Doping concentration; GaAs/GaAsBi; Gallium arsenide; Heterojunction bipolar transistors; Heterojunction diode; I-V characteristics; III-V semiconductor; Mathematical model; Semiconductor diodes; Semiconductor process modeling; speed; Transit time; Unity gain frequency; W D -V characteristics; Wireless communication
• DOI: 10.1109/ICCCT2.2015.7292721

HBT has emerged as the predominant technology for many commercial applications. This paper reports on the high speed GaAs/GaAsBi HBT technologies which are suitable for applications such as cellular, WLAN, modulator driver circuits. This paper presents a scheme of threshold-voltage-based 2-D theoretical model of GaAs/GaAsBi heterojunction diode in accordance with its various operational characteristics. Using MATLAB simulation current-voltage relationship of the recommended diode model is implemented for the prediction of its application in semiconductor filed. Furthermore depletion width-voltage characteristic give prediction of transit time of HBT using GaAs/GaAsBi material system. Capacitance-voltage relationship helps to anticipate about device performance after biasing. A comparative study of these relationships for various doping concentration is necessary for the purpose of selecting doping concentration that is attributed to device fabrication. The analytical simulation for Bismuth doping concentration of 2.1 %, 2.5 %, 3.1 %, 6.3 % and 12.5 % is done that reveals the dependency of performance characteristics of proposed heterojunction diode model on Bismuth doping concentration.