A high-performance poly-Si TFT technology compatible with flexible plastic substrates

The development of a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) technology which is compatible with plastic substrates is critical to the realisation of active matrix flat-panel displays that are flexible, lightweight, low cost and rugged. In this paper, we present...

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Bibliographic Details
Main Authors: Tung, Y.-J., Carey, P.M., Smith, P.M., Theiss, S.D., Meng, X., Weiss, R., Davis, G.A., Aebi, V., King, T.-J.
Format: Conference Proceeding
Language:English
Subjects:
Active matrix technology
Aluminum
Annealing
Costs
Displays
Plastics
Silicon
Substrates
Temperature
Thin film transistors
Online Access:Request full text
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Summary:The development of a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) technology which is compatible with plastic substrates is critical to the realisation of active matrix flat-panel displays that are flexible, lightweight, low cost and rugged. In this paper, we present performance comparisons of self-aligned aluminium top-gate poly-Si TFTs fabricated using a maximum substrate temperature of 150/spl deg/C using excimer laser annealing. The best devices have effective carrier mobilities >90 cm/Vs, threshold voltage 35 V. These are the highest performance poly-Si TFTs reported to date for use with polyester substrates.
DOI:10.1109/DRC.1998.731139