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An electrostatic-discharge-protection solution for Silicon-Carbide MESFET

Among wide band gap material for power electronic, Silicon Carbide (SiC) is the most advanced and starts to gain market shares. We have studied planar SiC MESFET ESD robustness. To solve the problem of their low intrinsic ESD robustness, we demonstrate in this work an effective protection solution a...

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Bibliographic Details
Main Authors: Phulpin, T., Tremouilles, D., Isoird, K., Tournier, D., Godignon, P., Austin, P.
Format: Conference Proceeding
Language:English
Subjects:
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Summary:Among wide band gap material for power electronic, Silicon Carbide (SiC) is the most advanced and starts to gain market shares. We have studied planar SiC MESFET ESD robustness. To solve the problem of their low intrinsic ESD robustness, we demonstrate in this work an effective protection solution and possible improvements.
ISSN:0739-5159
2164-9340
DOI:10.1109/EOSESD.2015.7314750