Loading…
An electrostatic-discharge-protection solution for Silicon-Carbide MESFET
Among wide band gap material for power electronic, Silicon Carbide (SiC) is the most advanced and starts to gain market shares. We have studied planar SiC MESFET ESD robustness. To solve the problem of their low intrinsic ESD robustness, we demonstrate in this work an effective protection solution a...
Saved in:
Main Authors: | , , , , , |
---|---|
Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Among wide band gap material for power electronic, Silicon Carbide (SiC) is the most advanced and starts to gain market shares. We have studied planar SiC MESFET ESD robustness. To solve the problem of their low intrinsic ESD robustness, we demonstrate in this work an effective protection solution and possible improvements. |
---|---|
ISSN: | 0739-5159 2164-9340 |
DOI: | 10.1109/EOSESD.2015.7314750 |