HBM failures induced by ESD cell turn-off and circuit interaction with ESD protection

Limited ESD simulations are often combined with topology checks to avoid ESD weaknesses arising from transient circuit interaction with ESD protection. In this work, we focus on a product designed using such a methodology exhibiting HBM failures. The failures were narrowed down to circuit interactio...

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Bibliographic Details
Main Authors: Xiao, Yang, Concannon, Ann, Sankaralingam, Rajkumar
Format: Conference Proceeding
Language:English
Subjects:
Computer architecture
Electrostatic discharges
Hardware design languages
Microprocessors
Resistors
Stress
Voltage measurement
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Description
Summary:Limited ESD simulations are often combined with topology checks to avoid ESD weaknesses arising from transient circuit interaction with ESD protection. In this work, we focus on a product designed using such a methodology exhibiting HBM failures. The failures were narrowed down to circuit interaction at ESD cell turn-on and turn-off.
ISSN:0739-5159
2164-9340
DOI:10.1109/EOSESD.2015.7314762