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Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts
Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents ~10 -12 A/mm, high ON/OFF current ratios 1011. Compared with HEMTs with conventional alloyed ohmic contacts, HEMTs with non-alloy...
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Published in: | IEEE electron device letters 2016-01, Vol.37 (1), p.16-19 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents ~10 -12 A/mm, high ON/OFF current ratios 1011. Compared with HEMTs with conventional alloyed ohmic contacts, HEMTs with non-alloyed contacts show a reduction of 106 in leakage current, a steeper subthreshold slope, and 50% improvement in breakdown voltage. These observations indicate that avoiding high-temperature alloyed ohmic processes can lead to improved device performance. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2015.2497252 |