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Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents ~10 -12 A/mm, high ON/OFF current ratios 1011. Compared with HEMTs with conventional alloyed ohmic contacts, HEMTs with non-alloy...

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Bibliographic Details
Published in:IEEE electron device letters 2016-01, Vol.37 (1), p.16-19
Main Authors: Bo Song, Mingda Zhu, Zongyang Hu, Meng Qi, Nomoto, Kazuki, Xiaodong Yan, Yu Cao, Jena, Debdeep, Xing, Huili Grace
Format: Article
Language:English
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Summary:Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents ~10 -12 A/mm, high ON/OFF current ratios 1011. Compared with HEMTs with conventional alloyed ohmic contacts, HEMTs with non-alloyed contacts show a reduction of 106 in leakage current, a steeper subthreshold slope, and 50% improvement in breakdown voltage. These observations indicate that avoiding high-temperature alloyed ohmic processes can lead to improved device performance.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2497252