Electric field-caused redistribution of mobile charged donors in semiconductors

The theoretical analysis is made for the opportunity of redistributing mobile point defects in a semiconductor affected by the electric field. It is assumed that the electric field is formed by voltage applied in two different ways: (i) directly to a sample, (ii) to a capacitor plates with a sample...

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Bibliographic Details
Main Authors: Sheinkman, M.K., Kashirina, N.I., Kislyuk, V.V.
Format: Conference Proceeding
Language:English
Subjects:
Cadmium compounds
Capacitors
Differential equations
Electrons
Physics
Poisson equations
Semiconductor devices
Space charge
Temperature
Voltage
Online Access:Request full text
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Summary:The theoretical analysis is made for the opportunity of redistributing mobile point defects in a semiconductor affected by the electric field. It is assumed that the electric field is formed by voltage applied in two different ways: (i) directly to a sample, (ii) to a capacitor plates with a sample between.
DOI:10.1109/SMICND.1998.732290