Experimental evidences and simulations of trap generation along a percolation path

In this paper we present experimental results of single trap impact on bulk MOSFETs, shedding light on counter intuitive behavior when increasing the gate bias. Using a well calibrated 3D TCAD model, statistical simulations at atomistic level are performed, demonstrating that the interactions betwee...

Full description

Saved in:
Bibliographic Details
Main Authors: Gerrer, Louis, Hussin, Razaidi, Amoroso, Salvatore M., Franco, J., Weckx, P., Simicic, M., Horiguchi, N., Kaczer, Ben, Grasser, T., Asenov, Asen
Format: Conference Proceeding
Language:English
Subjects:
Current density
Integrated circuit modeling
Integrated circuit reliability
Logic gates
MOSFET
Nanoscale devices
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper we present experimental results of single trap impact on bulk MOSFETs, shedding light on counter intuitive behavior when increasing the gate bias. Using a well calibrated 3D TCAD model, statistical simulations at atomistic level are performed, demonstrating that the interactions between the traps and the percolation path are responsible for the unexpected bias dependences of the trap impact and therefore that a trap generation enhanced by higher current densities along this path can explain measured data.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2015.7324755