The flatband potential and the rectification in the system ZnIn/sub 2/S/sub 4/-H/sub 2/O(S/sup 2-//S/sub 2//sup 2-/)

The electric properties of the electrolyte-semiconductor interface in the chains formed by metal auxiliary electrode-electrolyte-multinary layered semiconductors have been investigated. The dependencies of the flatband potential and of the contact potential at the ZnIn/sub 2/S/sub 4/-electrolyte int...

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Bibliographic Details
Main Authors: Tsiulyanu, I., Simashkevich, A., Sprinchean, A., Lyalikova, R.
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Current-voltage characteristics
Electric variables measurement
Electrodes
Iron
Orifices
Tin
Online Access:Request full text
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Summary:The electric properties of the electrolyte-semiconductor interface in the chains formed by metal auxiliary electrode-electrolyte-multinary layered semiconductors have been investigated. The dependencies of the flatband potential and of the contact potential at the ZnIn/sub 2/S/sub 4/-electrolyte interface on the concentration of S/sup 2-/ and S/sub 2//sup 2-/ ions were studied. The current-voltage characteristics of the electrolyte-ZnI/sub 2/S/sub 4/ contact are determined by the potential barrier which is formed in the semiconductor near the interface.
DOI:10.1109/SMICND.1998.733785