Total dose induced latch in short channel NMOS/SOI transistors

• Published in: IEEE transactions on nuclear science 1998-12, Vol.45 (6), p.2458-2466
• Main Authors: Ferlet-Cavrois, V., Quoizola, S., Musseau, O., Flament, O., Leray, J.L., Pelloie, J.L., Raynaud, C., Faynot, O.
• Format: Article
• Language: English
• Subjects: CMOS technology; Isolation technology; Latches; MOS devices; MOSFETs; Radiation hardening; Semiconductor films; Silicon; Space technology; Voltage
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.736486

A latch effect induced by total dose irradiation is observed in short channel SOI transistors. This effect appears on NMOS transistors with either a fully or a partially depleted structure. It is characterized by a hysteresis behavior of the Id-Vg characteristics at high drain bias for a given "critical" dose. Above this dose, we still observe a limited leakage current at low drain bias (0.1 V), but a high conduction current at high drain bias (2 V) as the transistor should be in the off-state. The critical dose above which the latch appears strongly depends on gate length, transistor structure (fully or partially depleted), buried oxide thickness and supply voltage. Two-dimensional (2D) numerical simulations indicate that the parasitic conduction is due to the latch of the back gate transistor triggered by charge trapping in the buried oxide. To avoid the latch induced by the floating body effect, different techniques can be used: doping engineering, body contacts, etc. The study of the main parameters influencing the latch (gate length, supply voltage) shows that the scaling of technologies does not necessarily imply an increased latch sensitivity. Some technological parameters like the buried oxide hardness and thickness can be used to avoid latch, even at high cumulated dose, on highly integrated SOI technologies.