Transient anode voltage modeling of IGBT and its carrier lifetime dependence

This work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for derivation of minority carrier concentration within the base....

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Bibliographic Details
Main Authors: Das, Avijit, Islam, Nazmul, Haq, Masud-ul, Khan, Ziaur Rahman
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Approximation
Approximation methods
Carrier lifetime
Carrier Lifetime Control
Charge carrier lifetime
Data models
Effective Base Width
Electric potential
Estimation
Insulated gate bipolar transistors
Mathematical analysis
Minority Carrier Lifetime
Minority carriers
Modelling
Parabolic Approximation
Transient analysis
Transient Anode Voltage
Voltage
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Summary:This work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for derivation of minority carrier concentration within the base. With the help of derived expression, an analytical model has been developed for turn-off voltage of IGBT in all minority carrier lifetime conditions. Better agreements with experimental data have been found compared to the linear model generally used. Finally, the implications of carrier lifetime dependence on the anode voltage are discussed, including implementation of such a carrier lifetime measurement technique.
ISSN:2159-3442
2159-3450
DOI:10.1109/TENCON.2015.7372970