Characterization of gain- and index-guided InGaN multiple quantum well laser diodes

We will discuss fabrication and characteristics of III-nitride based multiquantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The device structure includes a 4 /spl mu/m GaN:Si lateral n-contact layer, 0.4 /spl mu/m AlGaN cladding...

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Bibliographic Details
Main Authors: Kneissl, M., Bour, D.P., Romano, L.T., Hofstetter, D., McCluskey, M.D., Donaldson, R., Dunnrowicz, C., Johnson, N.M.
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Etching
Gallium nitride
Mirrors
Optical materials
Power generation
Space vector pulse width modulation
Temperature measurement
Threshold current
Waveguide junctions
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Summary:We will discuss fabrication and characteristics of III-nitride based multiquantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The device structure includes a 4 /spl mu/m GaN:Si lateral n-contact layer, 0.4 /spl mu/m AlGaN cladding layers, and a InGaN multiple quantum well active region surrounded by 0.1 /spl mu/m GaN:Si waveguide layers.
DOI:10.1109/LEOS.1998.739706