Negative binomial yield model parameter extraction using wafer probe bin map data

This paper presents a new technique of extracting the parameters associated with the Negative Binomial yield model from wafer probe bin map data. The method presented uses an exact solution of the simultaneous non-linear equations resulting from the application of one, two, and three die windowing s...

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Bibliographic Details
Main Authors: Langford, R.E., Liou, J.J.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Costs
Data mining
Electronics industry
History
Nonlinear equations
Parameter extraction
Probes
Productivity
Semiconductor device modeling
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Summary:This paper presents a new technique of extracting the parameters associated with the Negative Binomial yield model from wafer probe bin map data. The method presented uses an exact solution of the simultaneous non-linear equations resulting from the application of one, two, and three die windowing schemes in the analysis of wafer probe results. The results show that a large number of the wafers analyzed have cluster parameters greater than that typically reported in the literature.
DOI:10.1109/HKEDM.1998.740204