SiGe/electrode response to long-term high-temperature exposure

Joints between an n-type Si0.8Ge0.2(P0.3 atomic %) thermoelectric semiconductor and carbon electrodes were prepared by hot-pressing with thin sheets of titanium foil inserted between them at 1528 K in a vacuum. The content of phosphorous, measured using an Inductively Coupled Argon Plasma Emission S...

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Bibliographic Details
Main Authors: Hasezaki, K., Tsukuda, H., Yamada, A., Nakajima, S., Kang, Y., Niino, M.
Format: Conference Proceeding
Language:English
Subjects:
Argon
Atmospheric measurements
Atomic measurements
Carbon dioxide
Electrical resistance measurement
Electrodes
Germanium silicon alloys
Plasma measurements
Silicon germanium
Titanium
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Summary:Joints between an n-type Si0.8Ge0.2(P0.3 atomic %) thermoelectric semiconductor and carbon electrodes were prepared by hot-pressing with thin sheets of titanium foil inserted between them at 1528 K in a vacuum. The content of phosphorous, measured using an Inductively Coupled Argon Plasma Emission Spectrometer, decreased from 0.20% to 0.11% after joining. To evaluate the upper limit of heating dependence, the SiGe/carbon electrode was exposed in an argon atmosphere at 1273 K and 1373 K for 300 hours, after which the resistance and Seebeck coefficient were measured. These results showed that the power factor (/spl alpha//sup 2//spl sigma/) could be effectively evaluated using the Larson-Miller Parameter (C=13.3). SEM and EPMA observations showed the presence of many voids in the junction layer of the SiGe/carbon electrode after exposure. The titanium atoms were enriched in the junction layer, and started diffusing at a temperature of 1273 K or over.
ISSN:1094-2734
DOI:10.1109/ICT.1998.740418