Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)

Resistive switching memory (RRAM) is raising interest for future storage-class memory (SCM) and embedded applications due to high speed operation, low power and non-volatile behavior. While cycling endurance is currently well understood, the impact of cycling on switching and reliability is still a...

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Bibliographic Details
Main Authors: Wang, Z.-Q, Ambrogio, S., Balatti, S., Sills, S., Calderoni, A., Ramaswamy, N., Ielmini, D.
Format: Conference Proceeding
Language:English
Subjects:
Correlation
Cycles
Degradation
Devices
Electric potential
Electrical resistance measurement
Integrated circuits
Mathematical models
Meetings
Random access memory
Resistance
Switches
Switching
Voltage
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Summary:Resistive switching memory (RRAM) is raising interest for future storage-class memory (SCM) and embedded applications due to high speed operation, low power and non-volatile behavior. While cycling endurance is currently well understood, the impact of cycling on switching and reliability is still a matter of concern. To that purpose we study the cycling-induced degradation of HfO x RRAM in this work. We show that the resistance of the low-resistance state (LRS), the set voltage V set and the reset voltage V reset decrease with cycling, which we attribute to defect generation causing enhanced ion mobility. The degradation kinetics is modelled by an Arrhenius-driven distributed-energy model. Our study allows to predict set/reset voltages after any arbitrary number of cycles and for any set/reset cycling condition.
ISSN:2156-017X
DOI:10.1109/IEDM.2015.7409649