High-performance photonic BiCMOS process for the fabrication of high-bandwidth electronic-photonic integrated circuits

An advanced photonic BiCMOS process is demonstrated capable, on the receiver side, for 100 Gb/s optical line rate. Key components of this process are monolithically integrated wave-guide Ge photodiodes showing more than 70 GHz bandwidth and 1 A/W responsivity, and SiGe HBTs with f T /f max values of...

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Bibliographic Details
Main Authors: Knoll, D., Lischke, S., Barth, R., Zimmermann, L., Heinemann, B., Rucker, H., Mai, C., Kroh, M., Peczek, A., Awny, A., Ulusoy, C., Trusch, A., Kruger, A., Drews, J., Fraschke, M., Schmidt, D., Lisker, M., Voigt, K., Krune, E., Mai, A.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
BiCMOS integrated circuits
Devices
Integrated circuits
Meetings
P-i-n diodes
Photodiodes
Photonics
Receivers
Silicon germanides
Silicon germanium
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Summary:An advanced photonic BiCMOS process is demonstrated capable, on the receiver side, for 100 Gb/s optical line rate. Key components of this process are monolithically integrated wave-guide Ge photodiodes showing more than 70 GHz bandwidth and 1 A/W responsivity, and SiGe HBTs with f T /f max values of 240/290 GHz.
ISSN:2156-017X
DOI:10.1109/IEDM.2015.7409706