A 27 GHz 20 ps PNP technology

Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant...

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Bibliographic Details
Main Authors: Warnock, J., Lu, P., Chen, T., Toh, K.Y., Cressler, J.D., Jenkins, K.A., Tang, D.D., Burghartz, J., Sun, J.Y.C., Chuang, C.T., Li, G.P., Ning, T.H.
Format: Conference Proceeding
Language:English
Subjects:
Contact resistance
Current density
Current measurement
Delay
Density measurement
Electric resistance
Electron devices
Integrated circuit technology
Silicon
Transistors
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Summary:Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilaver in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1989.74201