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A 27 GHz 20 ps PNP technology
Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant...
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| creator | Warnock, J. Lu, P. Chen, T. Toh, K.Y. Cressler, J.D. Jenkins, K.A. Tang, D.D. Burghartz, J. Sun, J.Y.C. Chuang, C.T. Li, G.P. Ning, T.H. |
| description | Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilaver in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.< > |
| doi_str_mv | 10.1109/IEDM.1989.74201 |
| format | conference_proceeding |
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A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilaver in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.< ></description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780308174</identifier><identifier>ISBN: 9780780308176</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1989.74201</identifier><language>eng</language><publisher>IEEE</publisher><subject>Contact resistance ; Current density ; Current measurement ; Delay ; Density measurement ; Electric resistance ; Electron devices ; Integrated circuit technology ; Silicon ; Transistors</subject><ispartof>International Technical Digest on Electron Devices Meeting, 1989, p.903-905</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/74201$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/74201$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Warnock, J.</creatorcontrib><creatorcontrib>Lu, P.</creatorcontrib><creatorcontrib>Chen, T.</creatorcontrib><creatorcontrib>Toh, K.Y.</creatorcontrib><creatorcontrib>Cressler, J.D.</creatorcontrib><creatorcontrib>Jenkins, K.A.</creatorcontrib><creatorcontrib>Tang, D.D.</creatorcontrib><creatorcontrib>Burghartz, J.</creatorcontrib><creatorcontrib>Sun, J.Y.C.</creatorcontrib><creatorcontrib>Chuang, C.T.</creatorcontrib><creatorcontrib>Li, G.P.</creatorcontrib><creatorcontrib>Ning, T.H.</creatorcontrib><title>A 27 GHz 20 ps PNP technology</title><title>International Technical Digest on Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilaver in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.< ></description><subject>Contact resistance</subject><subject>Current density</subject><subject>Current measurement</subject><subject>Delay</subject><subject>Density measurement</subject><subject>Electric resistance</subject><subject>Electron devices</subject><subject>Integrated circuit technology</subject><subject>Silicon</subject><subject>Transistors</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780308174</isbn><isbn>9780780308176</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1989</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotzz1PAkEQgOGJH4kHWhsLk_0De87M3n5MSRCBBJWCwo7s3u3pGRTC0eCvJ1Grt3uSF-CWsCRCeZhPHp9LkiClrxjpDAom6zSSfzuHAfqABgP56gIKJGc0CYUrGPT9JyJ7K7aA-5Fir6azH8Wodr1avizVIdcf39vN9v14DZdt3PT55r9DWD1NVuOZXrxO5-PRQnfBHTRzY2N2beKIJrL3lsU1oW2SExGHLtWSvFQxhZgbIWIXjKNKorTIdTJDuPtju5zzerfvvuL-uP59MiewszpY</recordid><startdate>1989</startdate><enddate>1989</enddate><creator>Warnock, J.</creator><creator>Lu, P.</creator><creator>Chen, T.</creator><creator>Toh, K.Y.</creator><creator>Cressler, J.D.</creator><creator>Jenkins, K.A.</creator><creator>Tang, D.D.</creator><creator>Burghartz, J.</creator><creator>Sun, J.Y.C.</creator><creator>Chuang, C.T.</creator><creator>Li, G.P.</creator><creator>Ning, T.H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1989</creationdate><title>A 27 GHz 20 ps PNP technology</title><author>Warnock, J. ; Lu, P. ; Chen, T. ; Toh, K.Y. ; Cressler, J.D. ; Jenkins, K.A. ; Tang, D.D. ; Burghartz, J. ; Sun, J.Y.C. ; Chuang, C.T. ; Li, G.P. ; Ning, T.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i86t-22d5ae6fb2a03a2775296d8fdb6999606bc9b794ab8aed91126836149a9f02cb3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Contact resistance</topic><topic>Current density</topic><topic>Current measurement</topic><topic>Delay</topic><topic>Density measurement</topic><topic>Electric resistance</topic><topic>Electron devices</topic><topic>Integrated circuit technology</topic><topic>Silicon</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Warnock, J.</creatorcontrib><creatorcontrib>Lu, P.</creatorcontrib><creatorcontrib>Chen, T.</creatorcontrib><creatorcontrib>Toh, K.Y.</creatorcontrib><creatorcontrib>Cressler, J.D.</creatorcontrib><creatorcontrib>Jenkins, K.A.</creatorcontrib><creatorcontrib>Tang, D.D.</creatorcontrib><creatorcontrib>Burghartz, J.</creatorcontrib><creatorcontrib>Sun, J.Y.C.</creatorcontrib><creatorcontrib>Chuang, C.T.</creatorcontrib><creatorcontrib>Li, G.P.</creatorcontrib><creatorcontrib>Ning, T.H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Warnock, J.</au><au>Lu, P.</au><au>Chen, T.</au><au>Toh, K.Y.</au><au>Cressler, J.D.</au><au>Jenkins, K.A.</au><au>Tang, D.D.</au><au>Burghartz, J.</au><au>Sun, J.Y.C.</au><au>Chuang, C.T.</au><au>Li, G.P.</au><au>Ning, T.H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 27 GHz 20 ps PNP technology</atitle><btitle>International Technical Digest on Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1989</date><risdate>1989</risdate><spage>903</spage><epage>905</epage><pages>903-905</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780308174</isbn><isbn>9780780308176</isbn><abstract>Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilaver in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.< ></abstract><pub>IEEE</pub><doi>10.1109/IEDM.1989.74201</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | International Technical Digest on Electron Devices Meeting, 1989, p.903-905 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_74201 |
| source | IEEE Xplore All Conference Series |
| subjects | Contact resistance Current density Current measurement Delay Density measurement Electric resistance Electron devices Integrated circuit technology Silicon Transistors |
| title | A 27 GHz 20 ps PNP technology |
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