Solution-Based CdS on HfO2 Thin Films for High-Gain and Low-Voltage Unipolar Inverters

We demonstrate low-temperature processed and high-gain unipolar inverters operating at voltages as low as V D = 1 V. A maximum gain for a two-transistor unipolar inverter of 153 was achieved at V D = 5 V with the advantage of using a solution-based n-type semiconductor and an entire fabrication proc...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-04, Vol.63 (4), p.1437-1443
Main Authors: Mejia, Israel, Gutierrez-Heredia, Gerardo, Salas-Villasenor, Ana L., Alvarado-Beltran, Clemente G., Avila-Avendano, Carlos, Quevedo-Lopez, Manuel A.
Format: Article
Language:English
Subjects:
Cadmium sulfide (CdS)
Dielectric measurement
Dielectrics
Hafnium compounds
high gain
Inverters
Logic gates
low voltage
SPICE
Thin film transistors
thin-film transistor (TFT)
unipolar inverter
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Summary:We demonstrate low-temperature processed and high-gain unipolar inverters operating at voltages as low as V D = 1 V. A maximum gain for a two-transistor unipolar inverter of 153 was achieved at V D = 5 V with the advantage of using a solution-based n-type semiconductor and an entire fabrication process below 150 °C. We evaluate the impact of the gate dielectric thickness on the main thin-film transistor (TFT) parameters and operation voltage. In addition, we compare the conventional MOSFET square-law model indistinctly used in TFTs with a model specifically developed for TFTs. We demonstrate a methodology to model the TFT electrical characteristics and use the extracted parameters in SPICE simulations to evaluate different inverter configurations. Finally, we validate the SPICE simulations with our experiential results.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2532803