Solution-Based CdS on HfO2 Thin Films for High-Gain and Low-Voltage Unipolar Inverters

We demonstrate low-temperature processed and high-gain unipolar inverters operating at voltages as low as V D = 1 V. A maximum gain for a two-transistor unipolar inverter of 153 was achieved at V D = 5 V with the advantage of using a solution-based n-type semiconductor and an entire fabrication proc...

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Published in:IEEE transactions on electron devices 2016-04, Vol.63 (4), p.1437-1443
Main Authors: Mejia, Israel, Gutierrez-Heredia, Gerardo, Salas-Villasenor, Ana L., Alvarado-Beltran, Clemente G., Avila-Avendano, Carlos, Quevedo-Lopez, Manuel A.
Format: Article
Language:English
Subjects:
Cadmium sulfide (CdS)
Dielectric measurement
Dielectrics
Hafnium compounds
high gain
Inverters
Logic gates
low voltage
SPICE
Thin film transistors
thin-film transistor (TFT)
unipolar inverter
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container_issue 4
container_start_page 1437
container_title IEEE transactions on electron devices
container_volume 63
creator Mejia, Israel
Gutierrez-Heredia, Gerardo
Salas-Villasenor, Ana L.
Alvarado-Beltran, Clemente G.
Avila-Avendano, Carlos
Quevedo-Lopez, Manuel A.
description We demonstrate low-temperature processed and high-gain unipolar inverters operating at voltages as low as V D = 1 V. A maximum gain for a two-transistor unipolar inverter of 153 was achieved at V D = 5 V with the advantage of using a solution-based n-type semiconductor and an entire fabrication process below 150 °C. We evaluate the impact of the gate dielectric thickness on the main thin-film transistor (TFT) parameters and operation voltage. In addition, we compare the conventional MOSFET square-law model indistinctly used in TFTs with a model specifically developed for TFTs. We demonstrate a methodology to model the TFT electrical characteristics and use the extracted parameters in SPICE simulations to evaluate different inverter configurations. Finally, we validate the SPICE simulations with our experiential results.
doi_str_mv 10.1109/TED.2016.2532803
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fullrecord <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_7425165</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7425165</ieee_id><sourcerecordid>4046109151</sourcerecordid><originalsourceid>FETCH-LOGICAL-i203t-77b3068fe91af07434d28bc7399820b0140094d08459f8209afe8dfbc610e5243</originalsourceid><addsrcrecordid>eNotjUtLAzEUhYMoWKt7wU3Adeq9SWaSLLX2BYUu-tgOaSdpU6aTmpkq_nsH6upwPj7OIeQZYYAI5m01-hxwwHzAM8E1iBvSwyxTzOQyvyU9ANTMCC3uyUPTHLuaS8l7ZLOM1aUNsWYftnElHZZLGms69QtOV4dQ03GoTg31MdFp2B_YxHbM1iWdxx-2iVVr946u63COlU10Vn-71LrUPJI7b6vGPf1nn6zHo9VwyuaLyWz4PmeBg2iZUlsBufbOoPWgpJAl19udEsZoDltACWBkCVpmxnfEWO906be7HMFlXIo-eb3unlP8urimLY7xkuruskClFSBHxM56uVrBOVecUzjZ9FsoyTPMM_EHNeJZTQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1787012111</pqid></control><display><type>article</type><title>Solution-Based CdS on HfO2 Thin Films for High-Gain and Low-Voltage Unipolar Inverters</title><source>IEEE Xplore (Online service)</source><creator>Mejia, Israel ; Gutierrez-Heredia, Gerardo ; Salas-Villasenor, Ana L. ; Alvarado-Beltran, Clemente G. ; Avila-Avendano, Carlos ; Quevedo-Lopez, Manuel A.</creator><creatorcontrib>Mejia, Israel ; Gutierrez-Heredia, Gerardo ; Salas-Villasenor, Ana L. ; Alvarado-Beltran, Clemente G. ; Avila-Avendano, Carlos ; Quevedo-Lopez, Manuel A.</creatorcontrib><description>We demonstrate low-temperature processed and high-gain unipolar inverters operating at voltages as low as V D = 1 V. A maximum gain for a two-transistor unipolar inverter of 153 was achieved at V D = 5 V with the advantage of using a solution-based n-type semiconductor and an entire fabrication process below 150 °C. We evaluate the impact of the gate dielectric thickness on the main thin-film transistor (TFT) parameters and operation voltage. In addition, we compare the conventional MOSFET square-law model indistinctly used in TFTs with a model specifically developed for TFTs. We demonstrate a methodology to model the TFT electrical characteristics and use the extracted parameters in SPICE simulations to evaluate different inverter configurations. Finally, we validate the SPICE simulations with our experiential results.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2016.2532803</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Cadmium sulfide (CdS) ; Dielectric measurement ; Dielectrics ; Hafnium compounds ; high gain ; Inverters ; Logic gates ; low voltage ; SPICE ; Thin film transistors ; thin-film transistor (TFT) ; unipolar inverter</subject><ispartof>IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1437-1443</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7425165$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Mejia, Israel</creatorcontrib><creatorcontrib>Gutierrez-Heredia, Gerardo</creatorcontrib><creatorcontrib>Salas-Villasenor, Ana L.</creatorcontrib><creatorcontrib>Alvarado-Beltran, Clemente G.</creatorcontrib><creatorcontrib>Avila-Avendano, Carlos</creatorcontrib><creatorcontrib>Quevedo-Lopez, Manuel A.</creatorcontrib><title>Solution-Based CdS on HfO2 Thin Films for High-Gain and Low-Voltage Unipolar Inverters</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We demonstrate low-temperature processed and high-gain unipolar inverters operating at voltages as low as V D = 1 V. A maximum gain for a two-transistor unipolar inverter of 153 was achieved at V D = 5 V with the advantage of using a solution-based n-type semiconductor and an entire fabrication process below 150 °C. We evaluate the impact of the gate dielectric thickness on the main thin-film transistor (TFT) parameters and operation voltage. In addition, we compare the conventional MOSFET square-law model indistinctly used in TFTs with a model specifically developed for TFTs. We demonstrate a methodology to model the TFT electrical characteristics and use the extracted parameters in SPICE simulations to evaluate different inverter configurations. Finally, we validate the SPICE simulations with our experiential results.</description><subject>Cadmium sulfide (CdS)</subject><subject>Dielectric measurement</subject><subject>Dielectrics</subject><subject>Hafnium compounds</subject><subject>high gain</subject><subject>Inverters</subject><subject>Logic gates</subject><subject>low voltage</subject><subject>SPICE</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>unipolar inverter</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNotjUtLAzEUhYMoWKt7wU3Adeq9SWaSLLX2BYUu-tgOaSdpU6aTmpkq_nsH6upwPj7OIeQZYYAI5m01-hxwwHzAM8E1iBvSwyxTzOQyvyU9ANTMCC3uyUPTHLuaS8l7ZLOM1aUNsWYftnElHZZLGms69QtOV4dQ03GoTg31MdFp2B_YxHbM1iWdxx-2iVVr946u63COlU10Vn-71LrUPJI7b6vGPf1nn6zHo9VwyuaLyWz4PmeBg2iZUlsBufbOoPWgpJAl19udEsZoDltACWBkCVpmxnfEWO906be7HMFlXIo-eb3unlP8urimLY7xkuruskClFSBHxM56uVrBOVecUzjZ9FsoyTPMM_EHNeJZTQ</recordid><startdate>201604</startdate><enddate>201604</enddate><creator>Mejia, Israel</creator><creator>Gutierrez-Heredia, Gerardo</creator><creator>Salas-Villasenor, Ana L.</creator><creator>Alvarado-Beltran, Clemente G.</creator><creator>Avila-Avendano, Carlos</creator><creator>Quevedo-Lopez, Manuel A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201604</creationdate><title>Solution-Based CdS on HfO2 Thin Films for High-Gain and Low-Voltage Unipolar Inverters</title><author>Mejia, Israel ; Gutierrez-Heredia, Gerardo ; Salas-Villasenor, Ana L. ; Alvarado-Beltran, Clemente G. ; Avila-Avendano, Carlos ; Quevedo-Lopez, Manuel A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-77b3068fe91af07434d28bc7399820b0140094d08459f8209afe8dfbc610e5243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Cadmium sulfide (CdS)</topic><topic>Dielectric measurement</topic><topic>Dielectrics</topic><topic>Hafnium compounds</topic><topic>high gain</topic><topic>Inverters</topic><topic>Logic gates</topic><topic>low voltage</topic><topic>SPICE</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><topic>unipolar inverter</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mejia, Israel</creatorcontrib><creatorcontrib>Gutierrez-Heredia, Gerardo</creatorcontrib><creatorcontrib>Salas-Villasenor, Ana L.</creatorcontrib><creatorcontrib>Alvarado-Beltran, Clemente G.</creatorcontrib><creatorcontrib>Avila-Avendano, Carlos</creatorcontrib><creatorcontrib>Quevedo-Lopez, Manuel A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore (Online service)</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mejia, Israel</au><au>Gutierrez-Heredia, Gerardo</au><au>Salas-Villasenor, Ana L.</au><au>Alvarado-Beltran, Clemente G.</au><au>Avila-Avendano, Carlos</au><au>Quevedo-Lopez, Manuel A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solution-Based CdS on HfO2 Thin Films for High-Gain and Low-Voltage Unipolar Inverters</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2016-04</date><risdate>2016</risdate><volume>63</volume><issue>4</issue><spage>1437</spage><epage>1443</epage><pages>1437-1443</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We demonstrate low-temperature processed and high-gain unipolar inverters operating at voltages as low as V D = 1 V. A maximum gain for a two-transistor unipolar inverter of 153 was achieved at V D = 5 V with the advantage of using a solution-based n-type semiconductor and an entire fabrication process below 150 °C. We evaluate the impact of the gate dielectric thickness on the main thin-film transistor (TFT) parameters and operation voltage. In addition, we compare the conventional MOSFET square-law model indistinctly used in TFTs with a model specifically developed for TFTs. We demonstrate a methodology to model the TFT electrical characteristics and use the extracted parameters in SPICE simulations to evaluate different inverter configurations. Finally, we validate the SPICE simulations with our experiential results.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2016.2532803</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record>
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subjects Cadmium sulfide (CdS)
Dielectric measurement
Dielectrics
Hafnium compounds
high gain
Inverters
Logic gates
low voltage
SPICE
Thin film transistors
thin-film transistor (TFT)
unipolar inverter
title Solution-Based CdS on HfO2 Thin Films for High-Gain and Low-Voltage Unipolar Inverters
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T12%3A14%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Solution-Based%20CdS%20on%20HfO2%20Thin%20Films%20for%20High-Gain%20and%20Low-Voltage%20Unipolar%20Inverters&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Mejia,%20Israel&rft.date=2016-04&rft.volume=63&rft.issue=4&rft.spage=1437&rft.epage=1443&rft.pages=1437-1443&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2016.2532803&rft_dat=%3Cproquest_ieee_%3E4046109151%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i203t-77b3068fe91af07434d28bc7399820b0140094d08459f8209afe8dfbc610e5243%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1787012111&rft_id=info:pmid/&rft_ieee_id=7425165&rfr_iscdi=true