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Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes

The adoption of silicon carbide (SiC) MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultrafast switching, such as phase-leg shoot-through ("crosstalk...

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Published in:IEEE transactions on power electronics 2017-01, Vol.32 (1), p.406-422
Main Authors: Qingzeng Yan, Xibo Yuan, Yiwen Geng, Charalambous, Apollo, Xiaojie Wu
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Language:English
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cited_by cdi_FETCH-LOGICAL-c336t-a6b6823a84f0598d1164a897311db5963ebbe17eceb5fcddb89860324ca613b53
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creator Qingzeng Yan
Xibo Yuan
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Charalambous, Apollo
Xiaojie Wu
description The adoption of silicon carbide (SiC) MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultrafast switching, such as phase-leg shoot-through ("crosstalk" effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter, which can overcome the limitations of the standard two-level voltage source converters when employing the fast-switching SiC devices. A mathematical model of the split output converter has been proposed to reveal how the split inductors can mitigate the crosstalk effect caused by the high switching speed. The improved switching performance (e.g., lower turn-on losses) and EMI benefit have been demonstrated experimentally. The current freewheeling problem, the current pulses and voltage spikes of the split inductors, and the disappeared synchronous rectification are explained in detail both experimentally and analytically. The results show that the split output converter can have lower power device losses compared with the standard two-level converter at high switching frequencies. However, the extra losses in the split inductors may impair the efficiency of the split output converter, which is verified by experiments in the continuous operating mode. A 95.91% efficiency has been achieved by the split output converter at the switching frequency of 100 kHz with suppressed crosstalk, lower turn-on losses, and reduced EMI.
doi_str_mv 10.1109/TPEL.2016.2536643
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source IEEE Electronic Library (IEL) Journals
subjects Crosstalk
Current pulses
Efficiency
Electric potential
Electromagnetic interference
Energy conversion efficiency
Inductors
Logic gates
MOSFET
MOSFETs
Performance evaluation
Power converters
Schottky diodes
Silicon carbide
split output converters
Switches
Switching
title Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes
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