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Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes
The adoption of silicon carbide (SiC) MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultrafast switching, such as phase-leg shoot-through ("crosstalk...
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Published in: | IEEE transactions on power electronics 2017-01, Vol.32 (1), p.406-422 |
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creator | Qingzeng Yan Xibo Yuan Yiwen Geng Charalambous, Apollo Xiaojie Wu |
description | The adoption of silicon carbide (SiC) MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultrafast switching, such as phase-leg shoot-through ("crosstalk" effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter, which can overcome the limitations of the standard two-level voltage source converters when employing the fast-switching SiC devices. A mathematical model of the split output converter has been proposed to reveal how the split inductors can mitigate the crosstalk effect caused by the high switching speed. The improved switching performance (e.g., lower turn-on losses) and EMI benefit have been demonstrated experimentally. The current freewheeling problem, the current pulses and voltage spikes of the split inductors, and the disappeared synchronous rectification are explained in detail both experimentally and analytically. The results show that the split output converter can have lower power device losses compared with the standard two-level converter at high switching frequencies. However, the extra losses in the split inductors may impair the efficiency of the split output converter, which is verified by experiments in the continuous operating mode. A 95.91% efficiency has been achieved by the split output converter at the switching frequency of 100 kHz with suppressed crosstalk, lower turn-on losses, and reduced EMI. |
doi_str_mv | 10.1109/TPEL.2016.2536643 |
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fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_7425221</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7425221</ieee_id><sourcerecordid>2174462098</sourcerecordid><originalsourceid>FETCH-LOGICAL-c336t-a6b6823a84f0598d1164a897311db5963ebbe17eceb5fcddb89860324ca613b53</originalsourceid><addsrcrecordid>eNo9kF1LwzAUhoMoOKc_QLwJeN2Zk6Rpcil1fsBkg04Eb0rapqxza2qSDvbv7dzw6vDC874HHoRugUwAiHpYLqazCSUgJjRmQnB2hkagOEQESHKORkTKOJJKsUt05f2aEOAxgRH6WhhXW7fVbWnwdKc3vQ6NbbGtcdZtmoDnfej6gFPb7owLxnn82YQVzpoUv8-z5-nSY91WfzkrVzaE7z1-amxl_DW6qPXGm5vTHaOPAU9fo9n85S19nEUlYyJEWhRCUqYlr0msZAUguJYqYQBVESvBTFEYSExpirguq6qQSgrCKC-1AFbEbIzuj7udsz-98SFf2961w8ucQsK5oETJgYIjVTrrvTN13rlmq90-B5IfFOYHhflBYX5SOHTujp3GGPPPJ5zGlAL7BQxLbAU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2174462098</pqid></control><display><type>article</type><title>Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Qingzeng Yan ; Xibo Yuan ; Yiwen Geng ; Charalambous, Apollo ; Xiaojie Wu</creator><creatorcontrib>Qingzeng Yan ; Xibo Yuan ; Yiwen Geng ; Charalambous, Apollo ; Xiaojie Wu</creatorcontrib><description>The adoption of silicon carbide (SiC) MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultrafast switching, such as phase-leg shoot-through ("crosstalk" effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter, which can overcome the limitations of the standard two-level voltage source converters when employing the fast-switching SiC devices. A mathematical model of the split output converter has been proposed to reveal how the split inductors can mitigate the crosstalk effect caused by the high switching speed. The improved switching performance (e.g., lower turn-on losses) and EMI benefit have been demonstrated experimentally. The current freewheeling problem, the current pulses and voltage spikes of the split inductors, and the disappeared synchronous rectification are explained in detail both experimentally and analytically. The results show that the split output converter can have lower power device losses compared with the standard two-level converter at high switching frequencies. However, the extra losses in the split inductors may impair the efficiency of the split output converter, which is verified by experiments in the continuous operating mode. A 95.91% efficiency has been achieved by the split output converter at the switching frequency of 100 kHz with suppressed crosstalk, lower turn-on losses, and reduced EMI.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2016.2536643</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Crosstalk ; Current pulses ; Efficiency ; Electric potential ; Electromagnetic interference ; Energy conversion efficiency ; Inductors ; Logic gates ; MOSFET ; MOSFETs ; Performance evaluation ; Power converters ; Schottky diodes ; Silicon carbide ; split output converters ; Switches ; Switching</subject><ispartof>IEEE transactions on power electronics, 2017-01, Vol.32 (1), p.406-422</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-a6b6823a84f0598d1164a897311db5963ebbe17eceb5fcddb89860324ca613b53</citedby><cites>FETCH-LOGICAL-c336t-a6b6823a84f0598d1164a897311db5963ebbe17eceb5fcddb89860324ca613b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7425221$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Qingzeng Yan</creatorcontrib><creatorcontrib>Xibo Yuan</creatorcontrib><creatorcontrib>Yiwen Geng</creatorcontrib><creatorcontrib>Charalambous, Apollo</creatorcontrib><creatorcontrib>Xiaojie Wu</creatorcontrib><title>Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>The adoption of silicon carbide (SiC) MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultrafast switching, such as phase-leg shoot-through ("crosstalk" effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter, which can overcome the limitations of the standard two-level voltage source converters when employing the fast-switching SiC devices. A mathematical model of the split output converter has been proposed to reveal how the split inductors can mitigate the crosstalk effect caused by the high switching speed. The improved switching performance (e.g., lower turn-on losses) and EMI benefit have been demonstrated experimentally. The current freewheeling problem, the current pulses and voltage spikes of the split inductors, and the disappeared synchronous rectification are explained in detail both experimentally and analytically. The results show that the split output converter can have lower power device losses compared with the standard two-level converter at high switching frequencies. However, the extra losses in the split inductors may impair the efficiency of the split output converter, which is verified by experiments in the continuous operating mode. A 95.91% efficiency has been achieved by the split output converter at the switching frequency of 100 kHz with suppressed crosstalk, lower turn-on losses, and reduced EMI.</description><subject>Crosstalk</subject><subject>Current pulses</subject><subject>Efficiency</subject><subject>Electric potential</subject><subject>Electromagnetic interference</subject><subject>Energy conversion efficiency</subject><subject>Inductors</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Performance evaluation</subject><subject>Power converters</subject><subject>Schottky diodes</subject><subject>Silicon carbide</subject><subject>split output converters</subject><subject>Switches</subject><subject>Switching</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><recordid>eNo9kF1LwzAUhoMoOKc_QLwJeN2Zk6Rpcil1fsBkg04Eb0rapqxza2qSDvbv7dzw6vDC874HHoRugUwAiHpYLqazCSUgJjRmQnB2hkagOEQESHKORkTKOJJKsUt05f2aEOAxgRH6WhhXW7fVbWnwdKc3vQ6NbbGtcdZtmoDnfej6gFPb7owLxnn82YQVzpoUv8-z5-nSY91WfzkrVzaE7z1-amxl_DW6qPXGm5vTHaOPAU9fo9n85S19nEUlYyJEWhRCUqYlr0msZAUguJYqYQBVESvBTFEYSExpirguq6qQSgrCKC-1AFbEbIzuj7udsz-98SFf2961w8ucQsK5oETJgYIjVTrrvTN13rlmq90-B5IfFOYHhflBYX5SOHTujp3GGPPPJ5zGlAL7BQxLbAU</recordid><startdate>201701</startdate><enddate>201701</enddate><creator>Qingzeng Yan</creator><creator>Xibo Yuan</creator><creator>Yiwen Geng</creator><creator>Charalambous, Apollo</creator><creator>Xiaojie Wu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope></search><sort><creationdate>201701</creationdate><title>Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes</title><author>Qingzeng Yan ; Xibo Yuan ; Yiwen Geng ; Charalambous, Apollo ; Xiaojie Wu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-a6b6823a84f0598d1164a897311db5963ebbe17eceb5fcddb89860324ca613b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Crosstalk</topic><topic>Current pulses</topic><topic>Efficiency</topic><topic>Electric potential</topic><topic>Electromagnetic interference</topic><topic>Energy conversion efficiency</topic><topic>Inductors</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Performance evaluation</topic><topic>Power converters</topic><topic>Schottky diodes</topic><topic>Silicon carbide</topic><topic>split output converters</topic><topic>Switches</topic><topic>Switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Qingzeng Yan</creatorcontrib><creatorcontrib>Xibo Yuan</creatorcontrib><creatorcontrib>Yiwen Geng</creatorcontrib><creatorcontrib>Charalambous, Apollo</creatorcontrib><creatorcontrib>Xiaojie Wu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Qingzeng Yan</au><au>Xibo Yuan</au><au>Yiwen Geng</au><au>Charalambous, Apollo</au><au>Xiaojie Wu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2017-01</date><risdate>2017</risdate><volume>32</volume><issue>1</issue><spage>406</spage><epage>422</epage><pages>406-422</pages><issn>0885-8993</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract>The adoption of silicon carbide (SiC) MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultrafast switching, such as phase-leg shoot-through ("crosstalk" effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter, which can overcome the limitations of the standard two-level voltage source converters when employing the fast-switching SiC devices. A mathematical model of the split output converter has been proposed to reveal how the split inductors can mitigate the crosstalk effect caused by the high switching speed. The improved switching performance (e.g., lower turn-on losses) and EMI benefit have been demonstrated experimentally. The current freewheeling problem, the current pulses and voltage spikes of the split inductors, and the disappeared synchronous rectification are explained in detail both experimentally and analytically. The results show that the split output converter can have lower power device losses compared with the standard two-level converter at high switching frequencies. However, the extra losses in the split inductors may impair the efficiency of the split output converter, which is verified by experiments in the continuous operating mode. A 95.91% efficiency has been achieved by the split output converter at the switching frequency of 100 kHz with suppressed crosstalk, lower turn-on losses, and reduced EMI.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPEL.2016.2536643</doi><tpages>17</tpages><oa>free_for_read</oa></addata></record> |
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language | eng |
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source | IEEE Electronic Library (IEL) Journals |
subjects | Crosstalk Current pulses Efficiency Electric potential Electromagnetic interference Energy conversion efficiency Inductors Logic gates MOSFET MOSFETs Performance evaluation Power converters Schottky diodes Silicon carbide split output converters Switches Switching |
title | Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T20%3A31%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Performance%20Evaluation%20of%20Split%20Output%20Converters%20With%20SiC%20MOSFETs%20and%20SiC%20Schottky%20Diodes&rft.jtitle=IEEE%20transactions%20on%20power%20electronics&rft.au=Qingzeng%20Yan&rft.date=2017-01&rft.volume=32&rft.issue=1&rft.spage=406&rft.epage=422&rft.pages=406-422&rft.issn=0885-8993&rft.eissn=1941-0107&rft.coden=ITPEE8&rft_id=info:doi/10.1109/TPEL.2016.2536643&rft_dat=%3Cproquest_ieee_%3E2174462098%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c336t-a6b6823a84f0598d1164a897311db5963ebbe17eceb5fcddb89860324ca613b53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2174462098&rft_id=info:pmid/&rft_ieee_id=7425221&rfr_iscdi=true |