Self-aligned bipolar npn transistor with 60 nm epitaxial base

A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-k Omega /sq. intrinsic base sheet resistance,...

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Bibliographic Details
Main Authors: Burghartz, J.N., Mader, S.R., Meyerson, B.S., Ginsberg, B.J., Stork, J.M., Stanis, C., Sun, J.Y.
Format: Conference Proceeding
Language:English
Subjects:
Boron
Doping
Epitaxial growth
Isolation technology
Lifting equipment
Lithography
Optical films
Oxidation
Tellurium
Temperature
Online Access:Request full text
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Summary:A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-k Omega /sq. intrinsic base sheet resistance, a peak current gain up to 115, and a C-B breakdown voltage of 7.5 V. Despite the low intrinsic base sheet resistance, a peak transit frequency of 30 GHz has been calculated for the transistor. Further, the advantages of SEEW technology for submicron emitters and very thin base formation are explained.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1989.74267