Self-aligned bipolar npn transistor with 60 nm epitaxial base

A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-k Omega /sq. intrinsic base sheet resistance,...

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Main Authors: Burghartz, J.N., Mader, S.R., Meyerson, B.S., Ginsberg, B.J., Stork, J.M., Stanis, C., Sun, J.Y.
Format: Conference Proceeding
Language:English
Subjects:
Boron
Doping
Epitaxial growth
Isolation technology
Lifting equipment
Lithography
Optical films
Oxidation
Tellurium
Temperature
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container_start_page 229
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creator Burghartz, J.N.
Mader, S.R.
Meyerson, B.S.
Ginsberg, B.J.
Stork, J.M.
Stanis, C.
Sun, J.Y.
description A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-k Omega /sq. intrinsic base sheet resistance, a peak current gain up to 115, and a C-B breakdown voltage of 7.5 V. Despite the low intrinsic base sheet resistance, a peak transit frequency of 30 GHz has been calculated for the transistor. Further, the advantages of SEEW technology for submicron emitters and very thin base formation are explained.< >
doi_str_mv 10.1109/IEDM.1989.74267
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fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_74267</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>74267</ieee_id><sourcerecordid>74267</sourcerecordid><originalsourceid>FETCH-LOGICAL-i86t-f8f449975cf24e413a2de3fa9066119bb01ce2169d23e37a2b0151296e36f5643</originalsourceid><addsrcrecordid>eNotj7tKA0EUQAcfYBKtxW5-YNZ75z2FhcSogYiFKezCbPaOjmw2y86C-vcRtTpwigOHsUuEChHC9XJx91Rh8KFyWlp3xCYSjRWA7vWYTcF5UODR6RM2AbRKYEB_xqalfABIZ4KZsJsXapOIbX7rqOF17vdtHHjXd3wcYldyGfcD_8zjO7fAux2nPo_xK8eW17HQOTtNsS108c8ZW98v1vNHsXp-WM5vVyJ7O4rkk9YhOLNNUpNGFWVDKsUA1iKGugbckkQbGqlIuSh_hEEZLCmbjNVqxq7-spmINv2Qd3H43vw-qwOr1Ed-</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Self-aligned bipolar npn transistor with 60 nm epitaxial base</title><source>IEEE Xplore All Conference Series</source><creator>Burghartz, J.N. ; Mader, S.R. ; Meyerson, B.S. ; Ginsberg, B.J. ; Stork, J.M. ; Stanis, C. ; Sun, J.Y.</creator><creatorcontrib>Burghartz, J.N. ; Mader, S.R. ; Meyerson, B.S. ; Ginsberg, B.J. ; Stork, J.M. ; Stanis, C. ; Sun, J.Y.</creatorcontrib><description>A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-k Omega /sq. intrinsic base sheet resistance, a peak current gain up to 115, and a C-B breakdown voltage of 7.5 V. Despite the low intrinsic base sheet resistance, a peak transit frequency of 30 GHz has been calculated for the transistor. Further, the advantages of SEEW technology for submicron emitters and very thin base formation are explained.&lt; &gt;</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780308174</identifier><identifier>ISBN: 9780780308176</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1989.74267</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boron ; Doping ; Epitaxial growth ; Isolation technology ; Lifting equipment ; Lithography ; Optical films ; Oxidation ; Tellurium ; Temperature</subject><ispartof>International Technical Digest on Electron Devices Meeting, 1989, p.229-232</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/74267$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2057,4049,4050,27924,54554,54919,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/74267$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Burghartz, J.N.</creatorcontrib><creatorcontrib>Mader, S.R.</creatorcontrib><creatorcontrib>Meyerson, B.S.</creatorcontrib><creatorcontrib>Ginsberg, B.J.</creatorcontrib><creatorcontrib>Stork, J.M.</creatorcontrib><creatorcontrib>Stanis, C.</creatorcontrib><creatorcontrib>Sun, J.Y.</creatorcontrib><title>Self-aligned bipolar npn transistor with 60 nm epitaxial base</title><title>International Technical Digest on Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-k Omega /sq. intrinsic base sheet resistance, a peak current gain up to 115, and a C-B breakdown voltage of 7.5 V. Despite the low intrinsic base sheet resistance, a peak transit frequency of 30 GHz has been calculated for the transistor. Further, the advantages of SEEW technology for submicron emitters and very thin base formation are explained.&lt; &gt;</description><subject>Boron</subject><subject>Doping</subject><subject>Epitaxial growth</subject><subject>Isolation technology</subject><subject>Lifting equipment</subject><subject>Lithography</subject><subject>Optical films</subject><subject>Oxidation</subject><subject>Tellurium</subject><subject>Temperature</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780308174</isbn><isbn>9780780308176</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1989</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj7tKA0EUQAcfYBKtxW5-YNZ75z2FhcSogYiFKezCbPaOjmw2y86C-vcRtTpwigOHsUuEChHC9XJx91Rh8KFyWlp3xCYSjRWA7vWYTcF5UODR6RM2AbRKYEB_xqalfABIZ4KZsJsXapOIbX7rqOF17vdtHHjXd3wcYldyGfcD_8zjO7fAux2nPo_xK8eW17HQOTtNsS108c8ZW98v1vNHsXp-WM5vVyJ7O4rkk9YhOLNNUpNGFWVDKsUA1iKGugbckkQbGqlIuSh_hEEZLCmbjNVqxq7-spmINv2Qd3H43vw-qwOr1Ed-</recordid><startdate>1989</startdate><enddate>1989</enddate><creator>Burghartz, J.N.</creator><creator>Mader, S.R.</creator><creator>Meyerson, B.S.</creator><creator>Ginsberg, B.J.</creator><creator>Stork, J.M.</creator><creator>Stanis, C.</creator><creator>Sun, J.Y.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1989</creationdate><title>Self-aligned bipolar npn transistor with 60 nm epitaxial base</title><author>Burghartz, J.N. ; Mader, S.R. ; Meyerson, B.S. ; Ginsberg, B.J. ; Stork, J.M. ; Stanis, C. ; Sun, J.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i86t-f8f449975cf24e413a2de3fa9066119bb01ce2169d23e37a2b0151296e36f5643</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Boron</topic><topic>Doping</topic><topic>Epitaxial growth</topic><topic>Isolation technology</topic><topic>Lifting equipment</topic><topic>Lithography</topic><topic>Optical films</topic><topic>Oxidation</topic><topic>Tellurium</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Burghartz, J.N.</creatorcontrib><creatorcontrib>Mader, S.R.</creatorcontrib><creatorcontrib>Meyerson, B.S.</creatorcontrib><creatorcontrib>Ginsberg, B.J.</creatorcontrib><creatorcontrib>Stork, J.M.</creatorcontrib><creatorcontrib>Stanis, C.</creatorcontrib><creatorcontrib>Sun, J.Y.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Burghartz, J.N.</au><au>Mader, S.R.</au><au>Meyerson, B.S.</au><au>Ginsberg, B.J.</au><au>Stork, J.M.</au><au>Stanis, C.</au><au>Sun, J.Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Self-aligned bipolar npn transistor with 60 nm epitaxial base</atitle><btitle>International Technical Digest on Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1989</date><risdate>1989</risdate><spage>229</spage><epage>232</epage><pages>229-232</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780308174</isbn><isbn>9780780308176</isbn><abstract>A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-k Omega /sq. intrinsic base sheet resistance, a peak current gain up to 115, and a C-B breakdown voltage of 7.5 V. Despite the low intrinsic base sheet resistance, a peak transit frequency of 30 GHz has been calculated for the transistor. Further, the advantages of SEEW technology for submicron emitters and very thin base formation are explained.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/IEDM.1989.74267</doi><tpages>4</tpages></addata></record>
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identifier ISSN: 0163-1918
ispartof International Technical Digest on Electron Devices Meeting, 1989, p.229-232
issn 0163-1918
2156-017X
language eng
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source IEEE Xplore All Conference Series
subjects Boron
Doping
Epitaxial growth
Isolation technology
Lifting equipment
Lithography
Optical films
Oxidation
Tellurium
Temperature
title Self-aligned bipolar npn transistor with 60 nm epitaxial base
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T18%3A53%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Self-aligned%20bipolar%20npn%20transistor%20with%2060%20nm%20epitaxial%20base&rft.btitle=International%20Technical%20Digest%20on%20Electron%20Devices%20Meeting&rft.au=Burghartz,%20J.N.&rft.date=1989&rft.spage=229&rft.epage=232&rft.pages=229-232&rft.issn=0163-1918&rft.eissn=2156-017X&rft.isbn=0780308174&rft.isbn_list=9780780308176&rft_id=info:doi/10.1109/IEDM.1989.74267&rft_dat=%3Cieee_CHZPO%3E74267%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i86t-f8f449975cf24e413a2de3fa9066119bb01ce2169d23e37a2b0151296e36f5643%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=74267&rfr_iscdi=true