ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3" SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtaine...

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Bibliographic Details
Published in:IEEE electron device letters 2016-05, Vol.37 (5), p.629-632
Main Authors: Aubry, R., Jacquet, J. C., Oualli, M., Patard, O., Piotrowicz, S., Chartier, E., Michel, N., Trinh Xuan, L., Lancereau, D., Potier, C., Magis, M., Gamarra, P., Lacam, C., Tordjman, M., Jardel, O., Dua, C., Delage, S. L.
Format: Article
Language:English
Subjects:
Current measurement
Gain
GaN
HEMTs
High Electron Mobility Transistor (HEMT)
High-Power
InAlN/GaN
Ka-Band
Logic gates
Microwave
Passivation
Power generation
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Summary:High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3" SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at 30 GHz as evidenced by CW Load Pull characterization: an output power of 6 W/mm and a power-added efficiency of 42%. A good extrinsic transconductance value higher than 450 mS/mm and a current density up to 1.55 A/mm were also measured on these transistors.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2540164