Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors

The realization of a buried metal electrode tunneling transistor is reported. The device is fabricated in an epitaxial monocrystalline (Al,Ga)As-NiAl-(Al,Ga)As semiconductor-metal-semiconductor heterostructure and uses the thinnest buried electrode ever reported. Using the current-voltage (I-V) char...

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Main Authors: Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Cheeks, T.L., Florez, L.T., Keramidas, V.G.
Format: Conference Proceeding
Language:English
Subjects:
Carrier confinement
Electrodes
Hot carriers
Potential well
Resonance
Schottky diodes
Stationary state
Temperature
Transconductance
Tunneling
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creator Tabatabaie, N.
Sands, T.
Harbison, J.P.
Gilchrist, H.L.
Cheeks, T.L.
Florez, L.T.
Keramidas, V.G.
description The realization of a buried metal electrode tunneling transistor is reported. The device is fabricated in an epitaxial monocrystalline (Al,Ga)As-NiAl-(Al,Ga)As semiconductor-metal-semiconductor heterostructure and uses the thinnest buried electrode ever reported. Using the current-voltage (I-V) characteristics of the Schottky diodes between the NiAl and the cladding semiconductor on either side, the 3.3-nm-thick buried metal is shown to behave as an independent electrode. The three terminal I-V results are used to describe the operation of a novel hidden-field effect transistor. A model for the transistor operation is proposed based on the resonant injection of hot carriers into a quantum confined subband of the buried metal well. This tunneling transistor operates at room temperature and exhibits a negative transconductance corresponding to approximately 0.5% of the total source current. The modulation mechanism requires stationary states and therefore is limited to the portion of the source current which is injected into the drain by resonant tunneling.< >
doi_str_mv 10.1109/IEDM.1989.74343
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_74343</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>74343</ieee_id><sourcerecordid>74343</sourcerecordid><originalsourceid>FETCH-LOGICAL-i86t-9f5c2fab56c619131cd74474f13327f386cebcc5ce5bad54ec5c67aca93143893</originalsourceid><addsrcrecordid>eNpNkEtLAzEYRYMPsK2uxV2WCp02mbyXQ621UBWkC3clk_mCkcyMTFLEf2-pLlzdw10cLheha0pmlBIzXy_vn2bUaDNTnHF2gkYlFbIgVL2dojFRmjCiqeJnaESoZAU1VF-gcUofhJRKGDFC3WvftzhD-wmDzfsBcH-k0He49_i2itOVna67uyrNn0MV5_8bXO-HAA1uIduIvyBG_B6aBrrCB4gNBu_BZZwH26WQcj-kS3TubUxw9ZcTtH1YbhePxeZltV5UmyJomQvjhSu9rYV08rCZUdcozhX3lLFSeaalg9o54UDUthEcDiiVddYwypk2bIJufrUBAHafQ2jt8L07nsR-AK0TWTk</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors</title><source>IEEE Xplore All Conference Series</source><creator>Tabatabaie, N. ; Sands, T. ; Harbison, J.P. ; Gilchrist, H.L. ; Cheeks, T.L. ; Florez, L.T. ; Keramidas, V.G.</creator><creatorcontrib>Tabatabaie, N. ; Sands, T. ; Harbison, J.P. ; Gilchrist, H.L. ; Cheeks, T.L. ; Florez, L.T. ; Keramidas, V.G.</creatorcontrib><description>The realization of a buried metal electrode tunneling transistor is reported. The device is fabricated in an epitaxial monocrystalline (Al,Ga)As-NiAl-(Al,Ga)As semiconductor-metal-semiconductor heterostructure and uses the thinnest buried electrode ever reported. Using the current-voltage (I-V) characteristics of the Schottky diodes between the NiAl and the cladding semiconductor on either side, the 3.3-nm-thick buried metal is shown to behave as an independent electrode. The three terminal I-V results are used to describe the operation of a novel hidden-field effect transistor. A model for the transistor operation is proposed based on the resonant injection of hot carriers into a quantum confined subband of the buried metal well. This tunneling transistor operates at room temperature and exhibits a negative transconductance corresponding to approximately 0.5% of the total source current. The modulation mechanism requires stationary states and therefore is limited to the portion of the source current which is injected into the drain by resonant tunneling.&lt; &gt;</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780308174</identifier><identifier>ISBN: 9780780308176</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1989.74343</identifier><language>eng</language><publisher>IEEE</publisher><subject>Carrier confinement ; Electrodes ; Hot carriers ; Potential well ; Resonance ; Schottky diodes ; Stationary state ; Temperature ; Transconductance ; Tunneling</subject><ispartof>International Technical Digest on Electron Devices Meeting, 1989, p.555-558</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/74343$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4047,4048,27923,54553,54918,54930</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/74343$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tabatabaie, N.</creatorcontrib><creatorcontrib>Sands, T.</creatorcontrib><creatorcontrib>Harbison, J.P.</creatorcontrib><creatorcontrib>Gilchrist, H.L.</creatorcontrib><creatorcontrib>Cheeks, T.L.</creatorcontrib><creatorcontrib>Florez, L.T.</creatorcontrib><creatorcontrib>Keramidas, V.G.</creatorcontrib><title>Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors</title><title>International Technical Digest on Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>The realization of a buried metal electrode tunneling transistor is reported. The device is fabricated in an epitaxial monocrystalline (Al,Ga)As-NiAl-(Al,Ga)As semiconductor-metal-semiconductor heterostructure and uses the thinnest buried electrode ever reported. Using the current-voltage (I-V) characteristics of the Schottky diodes between the NiAl and the cladding semiconductor on either side, the 3.3-nm-thick buried metal is shown to behave as an independent electrode. The three terminal I-V results are used to describe the operation of a novel hidden-field effect transistor. A model for the transistor operation is proposed based on the resonant injection of hot carriers into a quantum confined subband of the buried metal well. This tunneling transistor operates at room temperature and exhibits a negative transconductance corresponding to approximately 0.5% of the total source current. The modulation mechanism requires stationary states and therefore is limited to the portion of the source current which is injected into the drain by resonant tunneling.&lt; &gt;</description><subject>Carrier confinement</subject><subject>Electrodes</subject><subject>Hot carriers</subject><subject>Potential well</subject><subject>Resonance</subject><subject>Schottky diodes</subject><subject>Stationary state</subject><subject>Temperature</subject><subject>Transconductance</subject><subject>Tunneling</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780308174</isbn><isbn>9780780308176</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1989</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpNkEtLAzEYRYMPsK2uxV2WCp02mbyXQ621UBWkC3clk_mCkcyMTFLEf2-pLlzdw10cLheha0pmlBIzXy_vn2bUaDNTnHF2gkYlFbIgVL2dojFRmjCiqeJnaESoZAU1VF-gcUofhJRKGDFC3WvftzhD-wmDzfsBcH-k0He49_i2itOVna67uyrNn0MV5_8bXO-HAA1uIduIvyBG_B6aBrrCB4gNBu_BZZwH26WQcj-kS3TubUxw9ZcTtH1YbhePxeZltV5UmyJomQvjhSu9rYV08rCZUdcozhX3lLFSeaalg9o54UDUthEcDiiVddYwypk2bIJufrUBAHafQ2jt8L07nsR-AK0TWTk</recordid><startdate>1989</startdate><enddate>1989</enddate><creator>Tabatabaie, N.</creator><creator>Sands, T.</creator><creator>Harbison, J.P.</creator><creator>Gilchrist, H.L.</creator><creator>Cheeks, T.L.</creator><creator>Florez, L.T.</creator><creator>Keramidas, V.G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1989</creationdate><title>Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors</title><author>Tabatabaie, N. ; Sands, T. ; Harbison, J.P. ; Gilchrist, H.L. ; Cheeks, T.L. ; Florez, L.T. ; Keramidas, V.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i86t-9f5c2fab56c619131cd74474f13327f386cebcc5ce5bad54ec5c67aca93143893</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Carrier confinement</topic><topic>Electrodes</topic><topic>Hot carriers</topic><topic>Potential well</topic><topic>Resonance</topic><topic>Schottky diodes</topic><topic>Stationary state</topic><topic>Temperature</topic><topic>Transconductance</topic><topic>Tunneling</topic><toplevel>online_resources</toplevel><creatorcontrib>Tabatabaie, N.</creatorcontrib><creatorcontrib>Sands, T.</creatorcontrib><creatorcontrib>Harbison, J.P.</creatorcontrib><creatorcontrib>Gilchrist, H.L.</creatorcontrib><creatorcontrib>Cheeks, T.L.</creatorcontrib><creatorcontrib>Florez, L.T.</creatorcontrib><creatorcontrib>Keramidas, V.G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tabatabaie, N.</au><au>Sands, T.</au><au>Harbison, J.P.</au><au>Gilchrist, H.L.</au><au>Cheeks, T.L.</au><au>Florez, L.T.</au><au>Keramidas, V.G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors</atitle><btitle>International Technical Digest on Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1989</date><risdate>1989</risdate><spage>555</spage><epage>558</epage><pages>555-558</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780308174</isbn><isbn>9780780308176</isbn><abstract>The realization of a buried metal electrode tunneling transistor is reported. The device is fabricated in an epitaxial monocrystalline (Al,Ga)As-NiAl-(Al,Ga)As semiconductor-metal-semiconductor heterostructure and uses the thinnest buried electrode ever reported. Using the current-voltage (I-V) characteristics of the Schottky diodes between the NiAl and the cladding semiconductor on either side, the 3.3-nm-thick buried metal is shown to behave as an independent electrode. The three terminal I-V results are used to describe the operation of a novel hidden-field effect transistor. A model for the transistor operation is proposed based on the resonant injection of hot carriers into a quantum confined subband of the buried metal well. This tunneling transistor operates at room temperature and exhibits a negative transconductance corresponding to approximately 0.5% of the total source current. The modulation mechanism requires stationary states and therefore is limited to the portion of the source current which is injected into the drain by resonant tunneling.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/IEDM.1989.74343</doi><tpages>4</tpages></addata></record>
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identifier ISSN: 0163-1918
ispartof International Technical Digest on Electron Devices Meeting, 1989, p.555-558
issn 0163-1918
2156-017X
language eng
recordid cdi_ieee_primary_74343
source IEEE Xplore All Conference Series
subjects Carrier confinement
Electrodes
Hot carriers
Potential well
Resonance
Schottky diodes
Stationary state
Temperature
Transconductance
Tunneling
title Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T10%3A29%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Room%20temperature%20operation%20of%20(Al,Ga,In)As/NiAl/(Al,Ga,In)As%20buried%20metal%20well%20hidden-field%20effect%20transistors&rft.btitle=International%20Technical%20Digest%20on%20Electron%20Devices%20Meeting&rft.au=Tabatabaie,%20N.&rft.date=1989&rft.spage=555&rft.epage=558&rft.pages=555-558&rft.issn=0163-1918&rft.eissn=2156-017X&rft.isbn=0780308174&rft.isbn_list=9780780308176&rft_id=info:doi/10.1109/IEDM.1989.74343&rft_dat=%3Cieee_CHZPO%3E74343%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i86t-9f5c2fab56c619131cd74474f13327f386cebcc5ce5bad54ec5c67aca93143893%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=74343&rfr_iscdi=true