Efficiency improvement of the structure InGaN/GaN for solar cells applications

In this work, we were interested about the study of modeling and simulation of a structure based on In 1-x Ga x N/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorpti...

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Bibliographic Details
Main Authors: Aissat, Abdelkader, Bestam, Rachid, Arbouz, Hayet, Vilcot, Jean Perre
Format: Conference Proceeding
Language:English
Subjects:
Computational efficiency
Computing time
Electronics
Gallium
Gallium nitride
Gallium nitrides
Indium
Lattices
Materials
Mathematical models
optoelectronics
Photovoltaic cells
semiconductor III-V
Semiconductors
solar cell
Solar cells
Strain
Substrates
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Summary:In this work, we were interested about the study of modeling and simulation of a structure based on In 1-x Ga x N/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In 0.35 Ga 0.65 N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.
ISSN:2380-7393
DOI:10.1109/IRSEC.2015.7455000