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Efficiency improvement of the structure InGaN/GaN for solar cells applications

In this work, we were interested about the study of modeling and simulation of a structure based on In 1-x Ga x N/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorpti...

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Main Authors:	Aissat, Abdelkader, Bestam, Rachid, Arbouz, Hayet, Vilcot, Jean Perre
Format:	Conference Proceeding
Language:	English
Subjects:	Computational efficiency Computing time Electronics Gallium Gallium nitride Gallium nitrides Indium Lattices Materials Mathematical models optoelectronics Photovoltaic cells semiconductor III-V Semiconductors solar cell Solar cells Strain Substrates
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creator	Aissat, Abdelkader Bestam, Rachid Arbouz, Hayet Vilcot, Jean Perre
description	In this work, we were interested about the study of modeling and simulation of a structure based on In 1-x Ga x N/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In 0.35 Ga 0.65 N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.
doi_str_mv	10.1109/IRSEC.2015.7455000
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source	IEEE Xplore All Conference Series
subjects	Computational efficiency Computing time Electronics Gallium Gallium nitride Gallium nitrides Indium Lattices Materials Mathematical models optoelectronics Photovoltaic cells semiconductor III-V Semiconductors solar cell Solar cells Strain Substrates
title	Efficiency improvement of the structure InGaN/GaN for solar cells applications
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