Polysilicon thin film transistors fabricated at 100/spl deg/C on a flexible plastic substrate

We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100/spl deg/C on plastic (PET) substrates. A XeCl excimer laser has been used both to crystallize sputtered a-Si and to heavily dope the TFT source/drain regions. Using a PECVD SiO/sub 2/ l...

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Bibliographic Details
Main Authors: Theiss, S.D., Carey, P.G., Smith, P.M., Wickboldt, P., Sigmon, T.W., Tung, Y.J., King, T.-J.
Format: Conference Proceeding
Language:English
Subjects:
Costs
Crystallization
Dielectric substrates
Displays
Optical pulses
Plastics
Positron emission tomography
Pulsed laser deposition
Temperature
Thin film transistors
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Summary:We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100/spl deg/C on plastic (PET) substrates. A XeCl excimer laser has been used both to crystallize sputtered a-Si and to heavily dope the TFT source/drain regions. Using a PECVD SiO/sub 2/ layer for the gate dielectric, and a post-fabrication anneal at 150/spl deg/C, we have succeeded in fabricating TFTs with I/sub ON//I/sub OFF/ ratios >5/spl times/10/sup 5/ and electron mobilities >60 cm/sup 2//V-s on polyester substrates.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1998.746349