Cost-effective cleaning for advanced Si-processing

The effect of various metal contaminants on the thin gate oxide integrity is investigated and a classification is made according to their final position in the structure. A simplified cleaning strategy is presented which is highly performant and at the same time cost-effective and has less environme...

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Bibliographic Details
Main Authors: Heyns, M.M., Bearda, T., Cornelissen, I., De Gendt, S., Knotter, D.M., Loewenstein, L.M., Lux, M., Mertens, P.W., Mertens, S., Meuris, M., Schaekers, M., Snee, P., Teerlinck, I., Vos, R.
Format: Conference Proceeding
Language:English
Subjects:
Atomic measurements
Chromium
Contamination
Green cleaning
Oxidation
Pollution measurement
Silicon
Spinning
Strontium
Zinc
Online Access:Request full text
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Summary:The effect of various metal contaminants on the thin gate oxide integrity is investigated and a classification is made according to their final position in the structure. A simplified cleaning strategy is presented which is highly performant and at the same time cost-effective and has less environmental impact than the traditional cleaning sequences. Finally, a novel environmentally friendly ozone/DI-water process for the removal of photoresist and organic post-etch residues is proposed.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1998.746365