Advanced interconnect scheme analysis: real impact of technological improvements

We analyse advanced scenarios for 0.13 /spl mu/m interconnect technology. This exhaustive study of all critical parameters, including process dispersion, is based on design of experiment and systematic simulation of delay and crosstalk. The simultaneous reductions of both parasitic effects are incom...

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Bibliographic Details
Main Authors: Lecarval, G., Morand, Y., Roger, F., Rivallin, P., Poncet, D.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum
Capacitors
Copper
Crosstalk
Delay
Dielectrics
Electrical resistance measurement
Predictive models
Silicon compounds
Space technology
Online Access:Request full text
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Description
Summary:We analyse advanced scenarios for 0.13 /spl mu/m interconnect technology. This exhaustive study of all critical parameters, including process dispersion, is based on design of experiment and systematic simulation of delay and crosstalk. The simultaneous reductions of both parasitic effects are incompatible. The limited impact of technological evolutions will involve design solutions to significantly improve crosstalk.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1998.746485