The origin of secondary electron gate current: a multiple-stage Monte Carlo study for scaled, low-power flash memory

A multiple-stage simulation procedure identifies, for the first time, the location of secondary electrons that very efficiently produce gate currents in flash EEPROMs. The simulation method incorporates both electron and hole Monte Carlo analysis to calculate this secondary electron gate current wit...

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Bibliographic Details
Main Authors: Kencke, D.L., Wang, X., Wang, H., Ouyang, Q., Jallepalli, S., Rashed, M., Maziar, C., Tasch, A., Banerjee, S.K.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier processes
Discrete event simulation
Doping
Electrons
EPROM
Flash memory
Impact ionization
Microelectronics
Monte Carlo methods
Probability distribution
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Summary:A multiple-stage simulation procedure identifies, for the first time, the location of secondary electrons that very efficiently produce gate currents in flash EEPROMs. The simulation method incorporates both electron and hole Monte Carlo analysis to calculate this secondary electron gate current without introducing additional fitting parameters. (I/sub g//I/sub d/) continues to increase for smaller channel length (50/spl times/ from L/sub g/-03.39 to 0.12 /spl mu/m) and higher substrate doping (more than 6/spl times/ when doubled) in scaled, low-power flash memory.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1998.746497