Record power added efficiency of bipolar power transistors for low voltage wireless applications

To increase the power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, we investigated the influence of transistor parasitics on PAE. We found that reducing the output capacitance increases the PAE due to better second harmonic tuning. By optimizing the t...

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Bibliographic Details
Main Authors: van Rijs, F., Visser, H.A., Magnee, P.H.C.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Breakdown voltage
Electrical resistance measurement
Low voltage
Parasitic capacitance
Power amplifiers
Power generation
Power measurement
Power transistors
Solid modeling
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Summary:To increase the power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, we investigated the influence of transistor parasitics on PAE. We found that reducing the output capacitance increases the PAE due to better second harmonic tuning. By optimizing the transistor for a low output capacitance we achieved a record PAE of 71% at 0.5 Watt, 1.8 GHz and 3.5 V supply voltage.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1998.746513