Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate

We proposed a new scheme, controlling the crack formation by notch patterns, to fabricate self-isolated high-efficiency gallium arsenide (GaAs)-based solar cells on a silicon (Si) substrate. The notch patterns introduced into the Si substrate were found to successfully generate the crack-free areas...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2016-07, Vol.6 (4), p.1031-1035
Main Authors: Oh, Sewoung, Jun, Dong Hwan, Shin, Keun Wook, Choi, InHye, Jung, Sang Hyun, Choi, JeHyuk, Park, Wonkyu, Park, Yongjo, Yoon, Euijoon
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Crack
Cracks
Epitaxial layers
Formations
Gallium arsenide
gallium arsenide (GaAs)
III-V semiconductor materials
isolation
metalorganic chemical vapor deposition
Notches
Photovoltaic cells
Silicon
silicon (Si)
Silicon substrates
Solar cells
Substrates
Surface cracks
Voltage
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Summary:We proposed a new scheme, controlling the crack formation by notch patterns, to fabricate self-isolated high-efficiency gallium arsenide (GaAs)-based solar cells on a silicon (Si) substrate. The notch patterns introduced into the Si substrate were found to successfully generate the crack-free areas of 2 mm × 2 mm size separated by the cracks for the 5.8-μm-thick GaAs layers on it. The individual solar cells on the crack-free areas were confirmed to be electrically isolated from one another by the well-defined crack array. The open-circuit voltage and the efficiency of the crack-free cell were improved to 0.87 V and 18.0%, respectively, from 0.78 V and 14.7% for the cell with 33.2 cm −1 of linear crack density.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2016.2566887