Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H-SiC After Nitrous Oxide Anneal

Properties of SiO 2 gate dielectric deposited by atomic layer deposition (ALD) on Si-face of 4H silicon carbide (SiC) were systematically studied. The interface state and effective fixed charge densities of ALD SiO 2 on n-type 4H-SiC with various post deposition anneal (PDA) conditions were evaluate...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-07, Vol.63 (7), p.2826-2830
Main Authors: Yang, Xiangyu, Lee, Bongmook, Misra, Veena
Format: Article
Language:English
Subjects:
Annealing
Atomic layer deposition
Atomic layer deposition (ALD)
charge
Interface states
MOS capacitors
MOSFET
MOSFETs
SiC
Silicon carbide
Silicon compounds
SiO
Threshold voltage
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Summary:Properties of SiO 2 gate dielectric deposited by atomic layer deposition (ALD) on Si-face of 4H silicon carbide (SiC) were systematically studied. The interface state and effective fixed charge densities of ALD SiO 2 on n-type 4H-SiC with various post deposition anneal (PDA) conditions were evaluated. It has been found that nitrous oxide (N 2 O) PDA not only reduces the effective fixed charge density, which includes the fixed oxide charge and charged interface states, at SiC/SiO 2 interface but also decreases the gate leakage current. Negative effective fixed charge is observed at SiC/ALD SiO 2 interface after N 2 O PDA. ALD SiO 2 -based lateral n-channel MOSFETs show high threshold voltage with the promising field-effect mobility and the peak field-effect mobility increases with N 2 O PDA temperature.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2565665