Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H-SiC After Nitrous Oxide Anneal

Properties of SiO 2 gate dielectric deposited by atomic layer deposition (ALD) on Si-face of 4H silicon carbide (SiC) were systematically studied. The interface state and effective fixed charge densities of ALD SiO 2 on n-type 4H-SiC with various post deposition anneal (PDA) conditions were evaluate...

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Published in:IEEE transactions on electron devices 2016-07, Vol.63 (7), p.2826-2830
Main Authors: Yang, Xiangyu, Lee, Bongmook, Misra, Veena
Format: Article
Language:English
Subjects:
Annealing
Atomic layer deposition
Atomic layer deposition (ALD)
charge
Interface states
MOS capacitors
MOSFET
MOSFETs
SiC
Silicon carbide
Silicon compounds
SiO
Threshold voltage
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Lee, Bongmook
Misra, Veena
description Properties of SiO 2 gate dielectric deposited by atomic layer deposition (ALD) on Si-face of 4H silicon carbide (SiC) were systematically studied. The interface state and effective fixed charge densities of ALD SiO 2 on n-type 4H-SiC with various post deposition anneal (PDA) conditions were evaluated. It has been found that nitrous oxide (N 2 O) PDA not only reduces the effective fixed charge density, which includes the fixed oxide charge and charged interface states, at SiC/SiO 2 interface but also decreases the gate leakage current. Negative effective fixed charge is observed at SiC/ALD SiO 2 interface after N 2 O PDA. ALD SiO 2 -based lateral n-channel MOSFETs show high threshold voltage with the promising field-effect mobility and the peak field-effect mobility increases with N 2 O PDA temperature.
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source IEEE Electronic Library (IEL) Journals
subjects Annealing
Atomic layer deposition
Atomic layer deposition (ALD)
charge
Interface states
MOS capacitors
MOSFET
MOSFETs
SiC
Silicon carbide
Silicon compounds
SiO
Threshold voltage
title Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H-SiC After Nitrous Oxide Anneal
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