Noise properties of SiGe heterojunction bipolar transistors

In this paper, we present a SiGe HBT featuring very attractive LF noise properties with excess corner noise frequency lower than 1 kHz. Concerning the high frequency noise, we report noise figure

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Bibliographic Details
Main Authors: Van Haaren, B., Regis, M., Gruhle, A., Mouis, M., Llopis, O., Escotte, L., Graffeuil, J., Plana, R.
Format: Conference Proceeding
Language:English
Subjects:
Active noise reduction
Circuit noise
Costs
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
Low-frequency noise
Millimeter wave technology
Phase noise
Silicon germanium
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Description
Summary:In this paper, we present a SiGe HBT featuring very attractive LF noise properties with excess corner noise frequency lower than 1 kHz. Concerning the high frequency noise, we report noise figure
DOI:10.1109/SMIC.1998.750171