Process-Induced Variations of 10-nm Node Bulk nFinFETs Considering Middle-of-Line Parasitics

Process-induced variations of 10-nm node n-type FinFETs considering middle-of-line parasitics were investigated in terms of dc/ac performances using fully calibrated TCAD simulations. Variations of positive fixed oxide charge density at shallow trench isolation interface and source/drain (S/D) heigh...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-09, Vol.63 (9), p.3399-3405
Main Authors: Yoon, Jun-Sik, Baek, Chang-Ki, Baek, Rock-Hyun
Format: Article
Language:English
Subjects:
10-nm node
Alternating current
Capacitance
Channels
Delay
Delays
Devices
Drains
effective current
FinFET
FinFETs
Gates
Junctions
Logic gates
Mathematical model
Nanostructure
OFF-state current
Performance evaluation
process-induced variability
RC delay
Spacers
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Summary:Process-induced variations of 10-nm node n-type FinFETs considering middle-of-line parasitics were investigated in terms of dc/ac performances using fully calibrated TCAD simulations. Variations of positive fixed oxide charge density at shallow trench isolation interface and source/drain (S/D) height influenced off-state and on-state performance variations, respectively, but slightly on RC delay variations. Fin width variations induced off-state performance and RC delay variations critically due to the fluctuation of short channel effects. But, fin height variations affected them slightly due to the preserved gate-to-channel controllability and the buffered effects by varying drain currents and gate capacitances in the same direction. Gate length, spacer length, and S/D length variations influenced dc/ac performance variations severely; 2-nm-length changes were barely acceptable to satisfy 10% RC delay margin. Thus, the process-induced variability parameters, including fin width, gate length, spacer length, and S/D length, should be controlled tightly under a few nanometers to reduce dc/ac performance variations of the FinFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2586505