Investigation of a GaN-on-Si HEMT optimized for the 5th-generation wireless communication

In this paper, AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have been fabricated on GaN-on-Si substrate. These devices were studied for the application of the 5 th generation (5G) wireless communication. The geometric parameters such as gate length (L g ), cap length (L cap )...

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Bibliographic Details
Main Authors: Huang, Hong-Fan, Liu, Xiao-Yong, Shi, Jin-Shan, Zhang, Lin-Qing, Zhao, Sheng-Xun, Lin, Min-Zhi, Wu, Bin, Wang, Peng-Fei
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Conferences
Devices
Drains
Electronics
Gallium nitride
Gates
HEMTs
High electron mobility transistors
Logic gates
Radio frequency
Semiconductor devices
Wide band gap semiconductors
Wireless communication
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Summary:In this paper, AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have been fabricated on GaN-on-Si substrate. These devices were studied for the application of the 5 th generation (5G) wireless communication. The geometric parameters such as gate length (L g ), cap length (L cap ) and gate-to-source distance (L gs ) are optimized so that the cut-off frequency reaches 38.8 GHz. It is found that decreasing L g and L gs can both improve drain current and peak transconductance (G mmax ). Highest drain current of 1 A/mm at V g =2V and biggest G mmax of 240 mS/mm was achieved. A fabricated device with L g of 100 nm, L cap of 300 nm and L gs of 800 nm showed a f T of 38.8 GHz and a f MAX of 60 GHz at V ds =5V which can meet the requirement of the 5G application.
ISSN:2162-755X
DOI:10.1109/ASICON.2015.7517068